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K7I321884C-EI33
Samsung Semiconductor
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Check for Price | Yes | Yes | Obsolete | 37.7487 Mbit | 18 | 2MX18 | 450 ps | 333 MHz | STANDARD SRAM | COMMON | 2000000 | 2.0972 M | SYNCHRONOUS | 3-STATE | PARALLEL | 300 mA | 1.7 V | 700 µA | CMOS | INDUSTRIAL | R-PBGA-B165 | Not Qualified | e1 | 3 | 85 °C | -40 °C | 165 | PLASTIC/EPOXY | BGA | BGA165,11X15,40 | RECTANGULAR | GRID ARRAY | YES | TIN SILVER COPPER | BALL | 1 mm | BOTTOM | SAMSUNG SEMICONDUCTOR INC | BGA, BGA165,11X15,40 | unknown | 3A991.B.2.A | 8542.32.00.41 | ||||||||||||
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K7I321884C-FC25T
Samsung Semiconductor
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Check for Price | No | No | Obsolete | 37.7487 Mbit | 18 | 2MX18 | 450 ps | 250 MHz | STANDARD SRAM | COMMON | 2000000 | 2.0972 M | SYNCHRONOUS | 3-STATE | PARALLEL | 250 mA | 1.7 V | 600 µA | CMOS | COMMERCIAL | R-PBGA-B165 | Not Qualified | e1 | 3 | 70 °C | 165 | PLASTIC/EPOXY | BGA | BGA165,11X15,40 | RECTANGULAR | GRID ARRAY | YES | TIN SILVER COPPER | BALL | 1 mm | BOTTOM | SAMSUNG SEMICONDUCTOR INC | BGA, BGA165,11X15,40 | unknown | 3A991.B.2.A | 8542.32.00.41 | |||||||||||||
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K7I321884C-EI30T
Samsung Semiconductor
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Check for Price | Yes | Yes | Obsolete | 37.7487 Mbit | 18 | 2MX18 | 450 ps | 300 MHz | STANDARD SRAM | COMMON | 2000000 | 2.0972 M | SYNCHRONOUS | 3-STATE | PARALLEL | 280 mA | 1.7 V | 650 µA | CMOS | INDUSTRIAL | R-PBGA-B165 | Not Qualified | e1 | 3 | 85 °C | -40 °C | 165 | PLASTIC/EPOXY | BGA | BGA165,11X15,40 | RECTANGULAR | GRID ARRAY | YES | TIN SILVER COPPER | BALL | 1 mm | BOTTOM | SAMSUNG SEMICONDUCTOR INC | BGA, BGA165,11X15,40 | unknown | 3A991.B.2.A | 8542.32.00.41 | ||||||||||||
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K7I321884C-EI25
Samsung Semiconductor
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Check for Price | Yes | Yes | Obsolete | 37.7487 Mbit | 18 | 2MX18 | 450 ps | 250 MHz | STANDARD SRAM | COMMON | 2000000 | 2.0972 M | SYNCHRONOUS | 3-STATE | PARALLEL | 250 mA | 1.7 V | 600 µA | CMOS | INDUSTRIAL | R-PBGA-B165 | Not Qualified | e1 | 3 | 85 °C | -40 °C | 165 | PLASTIC/EPOXY | BGA | BGA165,11X15,40 | RECTANGULAR | GRID ARRAY | YES | TIN SILVER COPPER | BALL | 1 mm | BOTTOM | SAMSUNG SEMICONDUCTOR INC | BGA, BGA165,11X15,40 | unknown | 3A991.B.2.A | 8542.32.00.41 | ||||||||||||
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K7I321884C-EC300
Samsung Semiconductor
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Check for Price | Yes | Obsolete | 37.7487 Mbit | 18 | 2MX18 | 1.8 V | 450 ps | 300 MHz | DDR SRAM | PIPELINED ARCHITECTURE | COMMON | 1 | 2000000 | 2.0972 M | SYNCHRONOUS | 3-STATE | PARALLEL | 280 mA | 1.7 V | 650 µA | 1.9 V | 1.7 V | CMOS | COMMERCIAL | R-PBGA-B165 | Not Qualified | e1 | 2 | 70 °C | 165 | PLASTIC/EPOXY | LBGA | BGA165,11X15,40 | RECTANGULAR | GRID ARRAY, LOW PROFILE | YES | TIN SILVER COPPER | BALL | 1 mm | BOTTOM | 1.4 mm | 17 mm | 15 mm | SAMSUNG SEMICONDUCTOR INC | LBGA, BGA165,11X15,40 | compliant | 3A991.B.2.A | 8542.32.00.41 | BGA | 165 | ||||
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K7I321884C-EI33T
Samsung Semiconductor
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Check for Price | No | Yes | Obsolete | 37.7487 Mbit | 18 | 2MX18 | 450 ps | 333 MHz | STANDARD SRAM | COMMON | 2000000 | 2.0972 M | SYNCHRONOUS | 3-STATE | PARALLEL | 300 mA | 1.7 V | 700 µA | CMOS | INDUSTRIAL | R-PBGA-B165 | Not Qualified | e1 | 85 °C | -40 °C | 165 | PLASTIC/EPOXY | BGA | BGA165,11X15,40 | RECTANGULAR | GRID ARRAY | YES | TIN SILVER COPPER | BALL | 1 mm | BOTTOM | SAMSUNG SEMICONDUCTOR INC | BGA, BGA165,11X15,40 | unknown | 3A991.B.2.A | 8542.32.00.41 | |||||||||||||
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K7I321884C-FI33
Samsung Semiconductor
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Check for Price | No | No | Obsolete | 37.7487 Mbit | 18 | 2MX18 | 450 ps | 333 MHz | STANDARD SRAM | COMMON | 2000000 | 2.0972 M | SYNCHRONOUS | 3-STATE | PARALLEL | 300 mA | 1.7 V | 700 µA | CMOS | INDUSTRIAL | R-PBGA-B165 | Not Qualified | e1 | 3 | 85 °C | -40 °C | 165 | PLASTIC/EPOXY | BGA | BGA165,11X15,40 | RECTANGULAR | GRID ARRAY | YES | TIN SILVER COPPER | BALL | 1 mm | BOTTOM | SAMSUNG SEMICONDUCTOR INC | BGA, BGA165,11X15,40 | unknown | 3A991.B.2.A | 8542.32.00.41 | ||||||||||||
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K7I321884C-FI330
Samsung Semiconductor
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Check for Price | No | Obsolete | 37.7487 Mbit | 18 | 2MX18 | 1.8 V | 450 ps | 333 MHz | DDR SRAM | PIPELINED ARCHITECTURE | COMMON | 1 | 2000000 | 2.0972 M | SYNCHRONOUS | 3-STATE | PARALLEL | 300 mA | 1.7 V | 700 µA | 1.9 V | 1.7 V | CMOS | INDUSTRIAL | R-PBGA-B165 | Not Qualified | e0 | 85 °C | -40 °C | 165 | PLASTIC/EPOXY | LBGA | BGA165,11X15,40 | RECTANGULAR | GRID ARRAY, LOW PROFILE | YES | TIN LEAD | BALL | 1 mm | BOTTOM | 1.4 mm | 17 mm | 15 mm | SAMSUNG SEMICONDUCTOR INC | LBGA, BGA165,11X15,40 | compliant | 3A991.B.2.A | 8542.32.00.41 | BGA | 165 | ||||
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K7I321884C-FI250
Samsung Semiconductor
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Check for Price | No | Obsolete | 37.7487 Mbit | 18 | 2MX18 | 1.8 V | 450 ps | 250 MHz | DDR SRAM | PIPELINED ARCHITECTURE | COMMON | 1 | 2000000 | 2.0972 M | SYNCHRONOUS | 3-STATE | PARALLEL | 250 mA | 1.7 V | 600 µA | 1.9 V | 1.7 V | CMOS | INDUSTRIAL | R-PBGA-B165 | Not Qualified | e0 | 85 °C | -40 °C | 165 | PLASTIC/EPOXY | LBGA | BGA165,11X15,40 | RECTANGULAR | GRID ARRAY, LOW PROFILE | YES | TIN LEAD | BALL | 1 mm | BOTTOM | 1.4 mm | 17 mm | 15 mm | SAMSUNG SEMICONDUCTOR INC | LBGA, BGA165,11X15,40 | compliant | 3A991.B.2.A | 8542.32.00.41 | BGA | 165 | ||||
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K7I321884C-FI25
Samsung Semiconductor
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Check for Price | No | No | Obsolete | 37.7487 Mbit | 18 | 2MX18 | 450 ps | 250 MHz | STANDARD SRAM | COMMON | 2000000 | 2.0972 M | SYNCHRONOUS | 3-STATE | PARALLEL | 250 mA | 1.7 V | 600 µA | CMOS | INDUSTRIAL | R-PBGA-B165 | Not Qualified | e1 | 3 | 85 °C | -40 °C | 165 | PLASTIC/EPOXY | BGA | BGA165,11X15,40 | RECTANGULAR | GRID ARRAY | YES | TIN SILVER COPPER | BALL | 1 mm | BOTTOM | SAMSUNG SEMICONDUCTOR INC | BGA, BGA165,11X15,40 | unknown | 3A991.B.2.A | 8542.32.00.41 |