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Parametric » Memory » SRAMs

Parametric results for: K6T1008V2E-GB70 under SRAMs

Select parts from the table below to compare.

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Select Parts		Part Number

		K6T1008V2E-GB70 Samsung Semiconductor
		K6T1008V2E-GB700 Samsung Semiconductor
		K6T1008V2E-GB70T Samsung Semiconductor

			Most Relevant					Technical														Compliance			Operating Conditions	Physical											Dimensions			Other
Composite Price	Rohs Code	Part Life Cycle Code	Memory Density	Memory Width	Organization	Supply Voltage-Nom (Vsup)	Access Time-Max	Memory IC Type	I/O Type	Number of Functions	Number of Words Code	Number of Words	Operating Mode	Output Characteristics	Parallel/Serial	Standby Voltage-Min	Supply Current-Max	Supply Voltage-Max (Vsup)	Supply Voltage-Min (Vsup)	Technology	Temperature Grade	JESD-30 Code	Qualification Status	JESD-609 Code	Operating Temperature-Max	Number of Terminals	Package Body Material	Package Code	Package Equivalence Code	Package Shape	Package Style	Surface Mount	Terminal Finish	Terminal Form	Terminal Pitch	Terminal Position	Seated Height-Max	Length	Width	Ihs Manufacturer	Part Package Code	Package Description	Pin Count	Reach Compliance Code	ECCN Code	HTS Code

Check for Price

No

Obsolete

1.0486 Mbit

8

128KX8

3.3 V

70 ns

STANDARD SRAM

COMMON

1

128000

131.072 k

ASYNCHRONOUS

3-STATE

PARALLEL

2 V

30 µA

3.6 V

3 V

CMOS

COMMERCIAL

R-PDSO-G32

Not Qualified

e0

70 °C

32

PLASTIC/EPOXY

SOP

SOP32,.56

RECTANGULAR

SMALL OUTLINE

YES

TIN LEAD

GULL WING

1.27 mm

DUAL

3 mm

20.47 mm

11.43 mm

SAMSUNG SEMICONDUCTOR INC

SOIC

0.525 INCH, PLASTIC, SOP-32

32

compliant

EAR99

8542.32.00.41

Check for Price

No

Obsolete

1.0486 Mbit

8

128KX8

3.3 V

70 ns

STANDARD SRAM

1

128000

131.072 k

ASYNCHRONOUS

PARALLEL

3.6 V

3 V

CMOS

COMMERCIAL

R-PDSO-G32

Not Qualified

70 °C

32

PLASTIC/EPOXY

SOP

RECTANGULAR

SMALL OUTLINE

YES

GULL WING

1.27 mm

DUAL

3 mm

20.47 mm

11.43 mm

SAMSUNG SEMICONDUCTOR INC

SOIC

SOP,

32

compliant

EAR99

8542.32.00.41

Check for Price

No

Obsolete

1.0486 Mbit

8

128KX8

3.3 V

70 ns

STANDARD SRAM

COMMON

1

128000

131.072 k

ASYNCHRONOUS

3-STATE

PARALLEL

2 V

30 µA

3.6 V

3 V

CMOS

COMMERCIAL

R-PDSO-G32

Not Qualified

e0

70 °C

32

PLASTIC/EPOXY

SOP

SOP32,.56

RECTANGULAR

SMALL OUTLINE

YES

Tin/Lead (Sn/Pb)

GULL WING

1.27 mm

DUAL

3 mm

20.47 mm

11.43 mm

SAMSUNG SEMICONDUCTOR INC

SOP, SOP32,.56

compliant

EAR99

8542.32.00.41

Compare

K6T1008V2E-GB70

Samsung Semiconductor

Check for Price

No

Obsolete

1.0486 Mbit

8

128KX8

3.3 V

70 ns

STANDARD SRAM

COMMON

1

128000

131.072 k

ASYNCHRONOUS

3-STATE

PARALLEL

2 V

30 µA

3.6 V

3 V

CMOS

COMMERCIAL

R-PDSO-G32

Not Qualified

e0

70 °C

32

PLASTIC/EPOXY

SOP

SOP32,.56

RECTANGULAR

SMALL OUTLINE

YES

TIN LEAD

GULL WING

1.27 mm

DUAL

3 mm

20.47 mm

11.43 mm

SAMSUNG SEMICONDUCTOR INC

SOIC

0.525 INCH, PLASTIC, SOP-32

32

compliant

EAR99

8542.32.00.41

K6T1008V2E-GB700

Samsung Semiconductor

Check for Price

No

Obsolete

1.0486 Mbit

8

128KX8

3.3 V

70 ns

STANDARD SRAM

1

128000

131.072 k

ASYNCHRONOUS

PARALLEL

3.6 V

3 V

CMOS

COMMERCIAL

R-PDSO-G32

Not Qualified

70 °C

32

PLASTIC/EPOXY

SOP

RECTANGULAR

SMALL OUTLINE

YES

GULL WING

1.27 mm

DUAL

3 mm

20.47 mm

11.43 mm

SAMSUNG SEMICONDUCTOR INC

SOIC

SOP,

32

compliant

EAR99

8542.32.00.41

K6T1008V2E-GB70T

Samsung Semiconductor

Check for Price

No

Obsolete

1.0486 Mbit

8

128KX8

3.3 V

70 ns

STANDARD SRAM

COMMON

1

128000

131.072 k

ASYNCHRONOUS

3-STATE

PARALLEL

2 V

30 µA

3.6 V

3 V

CMOS

COMMERCIAL

R-PDSO-G32

Not Qualified

e0

70 °C

32

PLASTIC/EPOXY

SOP

SOP32,.56

RECTANGULAR

SMALL OUTLINE

YES

Tin/Lead (Sn/Pb)

GULL WING

1.27 mm

DUAL

3 mm

20.47 mm

11.43 mm

SAMSUNG SEMICONDUCTOR INC

SOP, SOP32,.56

compliant

EAR99

8542.32.00.41