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Parametric » Memory » SRAMs

Parametric results for: K6R1016V1C-FC12 under SRAMs

Select parts from the table below to compare.

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Select Parts		Part Number

		K6R1016V1C-FC12 Samsung Semiconductor
		K6R1016V1C-FC120 Samsung Semiconductor
		K6R1016V1C-FC12T Samsung Semiconductor

			Most Relevant					Technical															Compliance			Operating Conditions			Physical											Dimensions			Other
Composite Price	Rohs Code	Part Life Cycle Code	Memory Density	Memory Width	Organization	Supply Voltage-Nom (Vsup)	Access Time-Max	Memory IC Type	I/O Type	Number of Functions	Number of Words Code	Number of Words	Operating Mode	Output Characteristics	Parallel/Serial	Standby Current-Max	Standby Voltage-Min	Supply Current-Max	Supply Voltage-Max (Vsup)	Supply Voltage-Min (Vsup)	Technology	Temperature Grade	JESD-30 Code	Qualification Status	JESD-609 Code	Moisture Sensitivity Level	Operating Temperature-Max	Peak Reflow Temperature (Cel)	Number of Terminals	Package Body Material	Package Code	Package Equivalence Code	Package Shape	Package Style	Surface Mount	Terminal Finish	Terminal Form	Terminal Pitch	Terminal Position	Seated Height-Max	Length	Width	Ihs Manufacturer	Part Package Code	Package Description	Pin Count	Reach Compliance Code	ECCN Code	HTS Code

Check for Price

No

Obsolete

1.0486 Mbit

16

64KX16

3.3 V

12 ns

STANDARD SRAM

COMMON

1

64000

65.536 k

ASYNCHRONOUS

3-STATE

PARALLEL

5 mA

3 V

95 µA

3.6 V

3 V

CMOS

COMMERCIAL

R-PBGA-B48

Not Qualified

e0

70 °C

48

PLASTIC/EPOXY

TFBGA

BGA48,6X8,30

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

YES

TIN LEAD

BALL

750 µm

BOTTOM

1.2 mm

7 mm

6 mm

SAMSUNG SEMICONDUCTOR INC

BGA

TFBGA, BGA48,6X8,30

48

unknown

3A991.B.2.B

8542.32.00.41

Check for Price

No

Obsolete

1.0486 Mbit

16

64KX16

3.3 V

12 ns

STANDARD SRAM

COMMON

64000

65.536 k

ASYNCHRONOUS

3-STATE

PARALLEL

5 mA

3 V

95 µA

CMOS

COMMERCIAL

R-PBGA-B48

Not Qualified

3

70 °C

240

48

PLASTIC/EPOXY

FBGA

BGA48,6X8,30

RECTANGULAR

GRID ARRAY, FINE PITCH

YES

BALL

750 µm

BOTTOM

SAMSUNG SEMICONDUCTOR INC

FBGA, BGA48,6X8,30

compliant

3A991.B.2.B

8542.32.00.41

Check for Price

No

Obsolete

1.0486 Mbit

16

64KX16

3.3 V

12 ns

STANDARD SRAM

COMMON

64000

65.536 k

ASYNCHRONOUS

3-STATE

PARALLEL

5 mA

3 V

95 µA

CMOS

COMMERCIAL

R-PBGA-B48

Not Qualified

3

70 °C

240

48

PLASTIC/EPOXY

FBGA

BGA48,6X8,30

RECTANGULAR

GRID ARRAY, FINE PITCH

YES

BALL

750 µm

BOTTOM

SAMSUNG SEMICONDUCTOR INC

FBGA, BGA48,6X8,30

compliant

3A991.B.2.B

8542.32.00.41

Compare

K6R1016V1C-FC12

Samsung Semiconductor

Check for Price

No

Obsolete

1.0486 Mbit

16

64KX16

3.3 V

12 ns

STANDARD SRAM

COMMON

1

64000

65.536 k

ASYNCHRONOUS

3-STATE

PARALLEL

5 mA

3 V

95 µA

3.6 V

3 V

CMOS

COMMERCIAL

R-PBGA-B48

Not Qualified

e0

70 °C

48

PLASTIC/EPOXY

TFBGA

BGA48,6X8,30

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

YES

TIN LEAD

BALL

750 µm

BOTTOM

1.2 mm

7 mm

6 mm

SAMSUNG SEMICONDUCTOR INC

BGA

TFBGA, BGA48,6X8,30

48

unknown

3A991.B.2.B

8542.32.00.41

K6R1016V1C-FC120

Samsung Semiconductor

Check for Price

No

Obsolete

1.0486 Mbit

16

64KX16

3.3 V

12 ns

STANDARD SRAM

COMMON

64000

65.536 k

ASYNCHRONOUS

3-STATE

PARALLEL

5 mA

3 V

95 µA

CMOS

COMMERCIAL

R-PBGA-B48

Not Qualified

3

70 °C

240

48

PLASTIC/EPOXY

FBGA

BGA48,6X8,30

RECTANGULAR

GRID ARRAY, FINE PITCH

YES

BALL

750 µm

BOTTOM

SAMSUNG SEMICONDUCTOR INC

FBGA, BGA48,6X8,30

compliant

3A991.B.2.B

8542.32.00.41

K6R1016V1C-FC12T

Samsung Semiconductor

Check for Price

No

Obsolete

1.0486 Mbit

16

64KX16

3.3 V

12 ns

STANDARD SRAM

COMMON

64000

65.536 k

ASYNCHRONOUS

3-STATE

PARALLEL

5 mA

3 V

95 µA

CMOS

COMMERCIAL

R-PBGA-B48

Not Qualified

3

70 °C

240

48

PLASTIC/EPOXY

FBGA

BGA48,6X8,30

RECTANGULAR

GRID ARRAY, FINE PITCH

YES

BALL

750 µm

BOTTOM

SAMSUNG SEMICONDUCTOR INC

FBGA, BGA48,6X8,30

compliant

3A991.B.2.B

8542.32.00.41