Parametric results for: K6F1616T6B-EF55 under SRAMs

All Filters Access Time-Max Additional Feature I/O Type JESD-30 Code JESD-609 Code Length Manufacturer Memory Density Memory IC Type Memory Width Number of Functions Number of Terminals Number of Words Number of Words Code Operating Mode Operating Temperature-Max Operating Temperature-Min Organization Output Characteristics Package Body Material Package Code Package Equivalence Code Package Shape Package Style Supply Voltage-Nom (Vsup) Access Time-Max (1)

55 ns 2

2 hits Apply

IT ALSO OPERATES AT 3.3V NOMINAL SUPPPLY 1

2 hits Apply

COMMON 1

2 hits Apply

S-PBGA-B48 2

2 hits Apply

e0 1

2 hits Apply

7 mm 2

2 hits Apply

Manufacturer (1)

Samsung Semiconductor 2

2 hits Apply

Memory Density (1)

16.7772 Mbit 2

2 hits Apply

STANDARD SRAM 2

2 hits Apply

Memory Width (1)

16 2

2 hits Apply

1.0 2

2 hits Apply

48 2

2 hits Apply

1.0486 M 2

2 hits Apply

1000000.0 2

2 hits Apply

ASYNCHRONOUS 2

2 hits Apply

85.0 °C 2

2 hits Apply

-40.0 °C 2

2 hits Apply

Organization (1)

1MX16 2

2 hits Apply

3-STATE 1

2 hits Apply

PLASTIC/EPOXY 2

2 hits Apply

VFBGA 2

2 hits Apply

BGA48,6X8,30 1

2 hits Apply

SQUARE 2

2 hits Apply

GRID ARRAY, VERY THIN PROFILE, FINE PITCH 2

2 hits Apply

Supply Voltage-Nom (Vsup) (1)

3 V 2

2 hits Apply