Findchips: Parametric Search Results for K6F1016U4B


Select Parts		Part Number

		K6F1016U4B-FF55 Samsung Semiconductor
		K6F1016U4B-FF55T Samsung Semiconductor
		K6F1016U4B-FF70T Samsung Semiconductor
		K6F1016U4B-FF70 Samsung Semiconductor

			Most Relevant					Technical															Compliance			Operating Conditions		Physical											Dimensions			Other
Composite Price	Rohs Code	Part Life Cycle Code	Memory Density	Memory Width	Organization	Supply Voltage-Nom (Vsup)	Access Time-Max	Memory IC Type	I/O Type	Number of Functions	Number of Words Code	Number of Words	Operating Mode	Output Characteristics	Parallel/Serial	Standby Current-Max	Standby Voltage-Min	Supply Current-Max	Supply Voltage-Max (Vsup)	Supply Voltage-Min (Vsup)	Technology	Temperature Grade	JESD-30 Code	Qualification Status	JESD-609 Code	Operating Temperature-Max	Operating Temperature-Min	Number of Terminals	Package Body Material	Package Code	Package Equivalence Code	Package Shape	Package Style	Surface Mount	Terminal Finish	Terminal Form	Terminal Pitch	Terminal Position	Seated Height-Max	Length	Width	Ihs Manufacturer	Part Package Code	Package Description	Pin Count	Reach Compliance Code	ECCN Code	HTS Code

Check for Price

Obsolete

1.0486 Mbit

64KX16

3 V

55 ns

STANDARD SRAM

COMMON

64000

65.536 k

ASYNCHRONOUS

3-STATE

PARALLEL

1 µA

1.5 V

35 µA

3.3 V

2.7 V

CMOS

INDUSTRIAL

R-PBGA-B48

Not Qualified

85 °C

-40 °C

PLASTIC/EPOXY

TFBGA

BGA48,6X8,30

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

YES

TIN LEAD

BALL

750 µm

BOTTOM

1.2 mm

7 mm

6 mm

SAMSUNG SEMICONDUCTOR INC

BGA

6 X 7 MM, 0.75 MM PITCH, FBGA-48

compliant

EAR99

8542.32.00.41

Check for Price

Obsolete

1.0486 Mbit

64KX16

3 V

55 ns

STANDARD SRAM

COMMON

64000

65.536 k

ASYNCHRONOUS

3-STATE

PARALLEL

1 µA

1.5 V

35 µA

CMOS

INDUSTRIAL

R-PBGA-B48

Not Qualified

85 °C

-40 °C

PLASTIC/EPOXY

FBGA

BGA48,6X8,30

RECTANGULAR

GRID ARRAY, FINE PITCH

YES

Tin/Lead (Sn/Pb)

BALL

750 µm

BOTTOM

SAMSUNG SEMICONDUCTOR INC

FBGA, BGA48,6X8,30

compliant

EAR99

8542.32.00.41

Check for Price

Obsolete

1.0486 Mbit

64KX16

3 V

70 ns

STANDARD SRAM

COMMON

64000

65.536 k

ASYNCHRONOUS

3-STATE

PARALLEL

1 µA

1.5 V

35 µA

CMOS

INDUSTRIAL

R-PBGA-B48

Not Qualified

85 °C

-40 °C

PLASTIC/EPOXY

FBGA

BGA48,6X8,30

RECTANGULAR

GRID ARRAY, FINE PITCH

YES

Tin/Lead (Sn/Pb)

BALL

750 µm

BOTTOM

SAMSUNG SEMICONDUCTOR INC

FBGA, BGA48,6X8,30

compliant

EAR99

8542.32.00.41

Check for Price

Obsolete

1.0486 Mbit

64KX16

3 V

70 ns

STANDARD SRAM

COMMON

64000

65.536 k

ASYNCHRONOUS

3-STATE

PARALLEL

1 µA

1.5 V

35 µA

3.3 V

2.7 V

CMOS

INDUSTRIAL

R-PBGA-B48

Not Qualified

85 °C

-40 °C

PLASTIC/EPOXY

TFBGA

BGA48,6X8,30

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

YES

TIN LEAD

BALL

750 µm

BOTTOM

1.2 mm

7 mm

6 mm

SAMSUNG SEMICONDUCTOR INC

BGA

TFBGA, BGA48,6X8,30

compliant

EAR99

8542.32.00.41

Compare

K6F1016U4B-FF55

Samsung Semiconductor

Check for Price

Obsolete

1.0486 Mbit

64KX16

3 V

55 ns

STANDARD SRAM

COMMON

64000

65.536 k

ASYNCHRONOUS

3-STATE

PARALLEL

1 µA

1.5 V

35 µA

3.3 V

2.7 V

CMOS

INDUSTRIAL

R-PBGA-B48

Not Qualified

85 °C

-40 °C

PLASTIC/EPOXY

TFBGA

BGA48,6X8,30

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

YES

TIN LEAD

BALL

750 µm

BOTTOM

1.2 mm

7 mm

6 mm

SAMSUNG SEMICONDUCTOR INC

BGA

6 X 7 MM, 0.75 MM PITCH, FBGA-48

compliant

EAR99

8542.32.00.41

K6F1016U4B-FF55T

Samsung Semiconductor

Check for Price

Obsolete

1.0486 Mbit

64KX16

3 V

55 ns

STANDARD SRAM

COMMON

64000

65.536 k

ASYNCHRONOUS

3-STATE

PARALLEL

1 µA

1.5 V

35 µA

CMOS

INDUSTRIAL

R-PBGA-B48

Not Qualified

85 °C

-40 °C

PLASTIC/EPOXY

FBGA

BGA48,6X8,30

RECTANGULAR

GRID ARRAY, FINE PITCH

YES

Tin/Lead (Sn/Pb)

BALL

750 µm

BOTTOM

SAMSUNG SEMICONDUCTOR INC

FBGA, BGA48,6X8,30

compliant

EAR99

8542.32.00.41

K6F1016U4B-FF70T

Samsung Semiconductor

Check for Price

Obsolete

1.0486 Mbit

64KX16

3 V

70 ns

STANDARD SRAM

COMMON

64000

65.536 k

ASYNCHRONOUS

3-STATE

PARALLEL

1 µA

1.5 V

35 µA

CMOS

INDUSTRIAL

R-PBGA-B48

Not Qualified

85 °C

-40 °C

PLASTIC/EPOXY

FBGA

BGA48,6X8,30

RECTANGULAR

GRID ARRAY, FINE PITCH

YES

Tin/Lead (Sn/Pb)

BALL

750 µm

BOTTOM

SAMSUNG SEMICONDUCTOR INC

FBGA, BGA48,6X8,30

compliant

EAR99

8542.32.00.41

K6F1016U4B-FF70

Samsung Semiconductor

Check for Price

Obsolete

1.0486 Mbit

64KX16

3 V

70 ns

STANDARD SRAM

COMMON

64000

65.536 k

ASYNCHRONOUS

3-STATE

PARALLEL

1 µA

1.5 V

35 µA

3.3 V

2.7 V

CMOS

INDUSTRIAL

R-PBGA-B48

Not Qualified

85 °C

-40 °C

PLASTIC/EPOXY

TFBGA

BGA48,6X8,30

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

YES

TIN LEAD

BALL

750 µm

BOTTOM

1.2 mm

7 mm

6 mm

SAMSUNG SEMICONDUCTOR INC

BGA

TFBGA, BGA48,6X8,30

compliant

EAR99

8542.32.00.41

Parametric results for: K6F1016U4B under SRAMs