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K5S3216Y0A-T385
Samsung Semiconductor
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Check for Price | Obsolete | 33.5544 Mbit | 16 | 2MX16 | 2.9 V | 85 ns | MEMORY CIRCUIT | ALSO CONTAINS 1M X 16 BIT FULL CMOS SRAM | PSRAM+SRAM | 1 | 2000000 | 2.0972 M | ASYNCHRONOUS | 10 µA | 35 µA | 3.1 V | 2.7 V | CMOS | OTHER | R-PBGA-B69 | Not Qualified | 85 °C | -25 °C | 69 | PLASTIC/EPOXY | TFBGA | BGA69,10X10,32 | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | YES | BALL | 800 µm | BOTTOM | 1.2 mm | 11 mm | 8 mm | SAMSUNG SEMICONDUCTOR INC | BGA | TFBGA, BGA69,10X10,32 | 69 | compliant | EAR99 | 8542.32.00.71 | ||
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K5S3216Y0A-T370
Samsung Semiconductor
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Check for Price | Obsolete | 33.5544 Mbit | 16 | 2MX16 | 2.9 V | 70 ns | MEMORY CIRCUIT | ALSO CONTAINS 1M X 16 BIT FULL CMOS SRAM | PSRAM+SRAM | 1 | 2000000 | 2.0972 M | ASYNCHRONOUS | 10 µA | 35 µA | 3.1 V | 2.7 V | CMOS | OTHER | R-PBGA-B69 | Not Qualified | 85 °C | -25 °C | 69 | PLASTIC/EPOXY | TFBGA | BGA69,10X10,32 | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | YES | BALL | 800 µm | BOTTOM | 1.2 mm | 11 mm | 8 mm | SAMSUNG SEMICONDUCTOR INC | BGA | TFBGA, BGA69,10X10,32 | 69 | compliant | EAR99 | 8542.32.00.71 |