Parametric results for: K4W2G1646C-HC150 under DRAMs

All Filters Access Mode Access Time-Max Additional Feature JESD-30 Code Length Manufacturer Memory Density Memory IC Type Memory Width Number of Functions Number of Ports Number of Terminals Number of Words Number of Words Code Operating Mode Operating Temperature-Max Operating Temperature-Min Organization Package Body Material Package Code Package Shape Package Style Supply Voltage-Nom (Vsup) Access Mode (1)

MULTI BANK PAGE BURST 1

1 hit Apply

Access Time-Max (1)

255 ps 1

1 hit Apply

AUTO/SELF REFRESH 1

1 hit Apply

R-PBGA-B96 1

1 hit Apply

13.3 mm 1

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Manufacturer (1)

Samsung Semiconductor 1

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Memory Density (1)

2.1475 Gbit 1

1 hit Apply

DDR DRAM 1

1 hit Apply

Memory Width (1)

16 1

1 hit Apply

1.0 1

1 hit Apply

1 1

1 hit Apply

96 1

1 hit Apply

134.2177 M 1

1 hit Apply

1.28E8 1

1 hit Apply

SYNCHRONOUS 1

1 hit Apply

95.0 °C 1

1 hit Apply

0.0 °C 1

1 hit Apply

Organization (1)

128MX16 1

1 hit Apply

PLASTIC/EPOXY 1

1 hit Apply

TFBGA 1

1 hit Apply

RECTANGULAR 1

1 hit Apply

GRID ARRAY, THIN PROFILE, FINE PITCH 1

1 hit Apply

Supply Voltage-Nom (Vsup) (1)

1.5 V 1

1 hit Apply