Findchips: Parametric Search Results for K4T51163QJ


Select Parts		Part Number

		K4T51163QJ-BCF7T Samsung Semiconductor
		K4T51163QJ-BCE7T Samsung Semiconductor
		K4T51163QJ-BCF8T Samsung Semiconductor
		K4T51163QJ-BCF80 Samsung Semiconductor
		K4T51163QJ-BCF70 Samsung Semiconductor
		K4T51163QJ-BCE6T Samsung Semiconductor
		K4T51163QJ-BCE70 Samsung Semiconductor
		K4T51163QJ-BCE60 Samsung Semiconductor

				Most Relevant								Technical																		Compliance			Operating Conditions				Physical											Dimensions			Other
Composite Price	Pbfree Code	Rohs Code	Part Life Cycle Code	Memory Density	Memory Width	Organization	Supply Voltage-Nom (Vsup)	Access Time-Max	Clock Frequency-Max (fCLK)	Refresh Cycles	Access Mode	Memory IC Type	Additional Feature	I/O Type	Interleaved Burst Length	Number of Functions	Number of Ports	Number of Words Code	Number of Words	Operating Mode	Output Characteristics	Self Refresh	Sequential Burst Length	Standby Current-Max	Supply Current-Max	Supply Voltage-Max (Vsup)	Supply Voltage-Min (Vsup)	Technology	Temperature Grade	JESD-30 Code	Qualification Status	JESD-609 Code	Moisture Sensitivity Level	Operating Temperature-Max	Peak Reflow Temperature (Cel)	Time@Peak Reflow Temperature-Max (s)	Number of Terminals	Package Body Material	Package Code	Package Equivalence Code	Package Shape	Package Style	Surface Mount	Terminal Finish	Terminal Form	Terminal Pitch	Terminal Position	Seated Height-Max	Length	Width	Ihs Manufacturer	Package Description	Reach Compliance Code	ECCN Code	HTS Code	Category CO2 Kg	Compliance Temperature Grade	EU RoHS Version	Candidate List Date	Part Package Code	Pin Count	Total Weight	CO2	CAS Accounted for Wt	CA Prop 65 Presence	CA Prop 65 CAS Numbers	Conflict Mineral Status	Conflict Mineral Status Source	Questions And Answers

Check for Price

Yes

Obsolete

536.8709 Mbit

32MX16

1.8 V

400 ps

400 MHz

8192

CACHE DRAM MODULE

COMMON

4,8

32000000

33.5544 M

3-STATE

4,8

8 mA

180 µA

CMOS

OTHER

R-PBGA-B84

Not Qualified

85 °C

260

PLASTIC/EPOXY

FBGA

BGA84,9X15,32

RECTANGULAR

GRID ARRAY, FINE PITCH

YES

MATTE TIN

BALL

800 µm

BOTTOM

SAMSUNG SEMICONDUCTOR INC

FBGA, BGA84,9X15,32

compliant

EAR99

8542.32.00.28

Commercial Extended: +0C to +85C

RoHS 2 (2011/65/EU)

2013-06-20

Check for Price

Yes

Obsolete

536.8709 Mbit

32MX16

1.8 V

400 ps

400 MHz

8192

CACHE DRAM MODULE

COMMON

4,8

32000000

33.5544 M

3-STATE

4,8

8 mA

185 µA

CMOS

OTHER

R-PBGA-B84

Not Qualified

85 °C

260

PLASTIC/EPOXY

FBGA

BGA84,9X15,32

RECTANGULAR

GRID ARRAY, FINE PITCH

YES

MATTE TIN

BALL

800 µm

BOTTOM

SAMSUNG SEMICONDUCTOR INC

FBGA, BGA84,9X15,32

compliant

EAR99

8542.32.00.28

Commercial Extended: +0C to +85C

RoHS 2 (2011/65/EU)

2013-06-20

Check for Price

Yes

Obsolete

536.8709 Mbit

32MX16

1.8 V

350 ps

533 MHz

8192

CACHE DRAM MODULE

COMMON

4,8

32000000

33.5544 M

3-STATE

4,8

8 mA

200 µA

CMOS

OTHER

R-PBGA-B84

Not Qualified

85 °C

PLASTIC/EPOXY

FBGA

BGA84,9X15,32

RECTANGULAR

GRID ARRAY, FINE PITCH

YES

MATTE TIN

BALL

800 µm

BOTTOM

SAMSUNG SEMICONDUCTOR INC

FBGA, BGA84,9X15,32

compliant

EAR99

8542.32.00.28

Commercial Extended: +0C to +85C

RoHS 2 (2015/863/EU)

2013-06-20

Check for Price

Yes

Obsolete

536.8709 Mbit

32MX16

1.8 V

350 ps

533 MHz

8192

FOUR BANK PAGE BURST

DDR2 DRAM

AUTO/SELF REFRESH

COMMON

4,8

32000000

33.5544 M

SYNCHRONOUS

3-STATE

YES

4,8

8 mA

200 µA

1.9 V

1.7 V

CMOS

OTHER

R-PBGA-B84

Not Qualified

85 °C

PLASTIC/EPOXY

TFBGA

BGA84,9X15,32

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

YES

TIN SILVER COPPER

BALL

800 µm

BOTTOM

1.2 mm

12.5 mm

7.5 mm

SAMSUNG SEMICONDUCTOR INC

TFBGA, BGA84,9X15,32

compliant

EAR99

8542.32.00.28

Commercial Extended: +0C to +85C

RoHS 2 (2015/863/EU)

2013-06-20

BGA

Check for Price

Yes

Obsolete

536.8709 Mbit

32MX16

1.8 V

400 ps

400 MHz

8192

FOUR BANK PAGE BURST

DDR2 DRAM

AUTO/SELF REFRESH

COMMON

4,8

32000000

33.5544 M

SYNCHRONOUS

3-STATE

YES

4,8

8 mA

180 µA

1.9 V

1.7 V

CMOS

OTHER

R-PBGA-B84

Not Qualified

85 °C

260

PLASTIC/EPOXY

TFBGA

BGA84,9X15,32

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

YES

TIN SILVER COPPER

BALL

800 µm

BOTTOM

1.2 mm

12.5 mm

7.5 mm

SAMSUNG SEMICONDUCTOR INC

TFBGA, BGA84,9X15,32

compliant

EAR99

8542.32.00.28

Commercial Extended: +0C to +85C

RoHS 2 (2011/65/EU)

2013-06-20

BGA

Check for Price

Yes

Obsolete

536.8709 Mbit

32MX16

1.8 V

450 ps

333 MHz

8192

CACHE DRAM MODULE

COMMON

4,8

32000000

33.5544 M

3-STATE

4,8

8 mA

170 µA

CMOS

OTHER

R-PBGA-B84

Not Qualified

85 °C

260

PLASTIC/EPOXY

FBGA

BGA84,9X15,32

RECTANGULAR

GRID ARRAY, FINE PITCH

YES

TIN SILVER COPPER

BALL

800 µm

BOTTOM

SAMSUNG SEMICONDUCTOR INC

FBGA, BGA84,9X15,32

compliant

EAR99

8542.32.00.28

Commercial Extended: +0C to +85C

RoHS 2 (2015/863/EU)

2024-01-23

167

2004

100

YES

1333-86-4

DRC Conflict Free Undeterminable

FMD

Check for Price

Yes

Obsolete

536.8709 Mbit

32MX16

1.8 V

400 ps

400 MHz

8192

FOUR BANK PAGE BURST

DDR2 DRAM

AUTO/SELF REFRESH

COMMON

4,8

32000000

33.5544 M

SYNCHRONOUS

3-STATE

YES

4,8

8 mA

185 µA

1.9 V

1.7 V

CMOS

OTHER

R-PBGA-B84

Not Qualified

85 °C

260

PLASTIC/EPOXY

TFBGA

BGA84,9X15,32

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

YES

TIN SILVER COPPER

BALL

800 µm

BOTTOM

1.2 mm

12.5 mm

7.5 mm

SAMSUNG SEMICONDUCTOR INC

TFBGA, BGA84,9X15,32

compliant

EAR99

8542.32.00.28

Commercial Extended: +0C to +85C

RoHS 2 (2011/65/EU)

2013-06-20

BGA

Check for Price

Yes

Obsolete

536.8709 Mbit

32MX16

1.8 V

450 ps

333 MHz

8192

FOUR BANK PAGE BURST

DDR2 DRAM

AUTO/SELF REFRESH

COMMON

4,8

32000000

33.5544 M

SYNCHRONOUS

3-STATE

YES

4,8

8 mA

170 µA

1.9 V

1.7 V

CMOS

OTHER

R-PBGA-B84

Not Qualified

85 °C

260

PLASTIC/EPOXY

TFBGA

BGA84,9X15,32

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

YES

Tin/Silver/Copper (Sn/Ag/Cu)

BALL

800 µm

BOTTOM

1.2 mm

12.5 mm

7.5 mm

SAMSUNG SEMICONDUCTOR INC

TFBGA, BGA84,9X15,32

compliant

EAR99

8542.32.00.28

Commercial Extended: +0C to +85C

RoHS 2 (2011/65/EU)

2013-06-20

BGA

[object Object],[object Object],[object ... more

Compare

K4T51163QJ-BCF7T

Samsung Semiconductor

Check for Price

Yes

Obsolete

536.8709 Mbit

32MX16

1.8 V

400 ps

400 MHz

8192

CACHE DRAM MODULE

COMMON

4,8

32000000

33.5544 M

3-STATE

4,8

8 mA

180 µA

CMOS

OTHER

R-PBGA-B84

Not Qualified

85 °C

260

PLASTIC/EPOXY

FBGA

BGA84,9X15,32

RECTANGULAR

GRID ARRAY, FINE PITCH

YES

MATTE TIN

BALL

800 µm

BOTTOM

SAMSUNG SEMICONDUCTOR INC

FBGA, BGA84,9X15,32

compliant

EAR99

8542.32.00.28

Commercial Extended: +0C to +85C

RoHS 2 (2011/65/EU)

2013-06-20

K4T51163QJ-BCE7T

Samsung Semiconductor

Check for Price

Yes

Obsolete

536.8709 Mbit

32MX16

1.8 V

400 ps

400 MHz

8192

CACHE DRAM MODULE

COMMON

4,8

32000000

33.5544 M

3-STATE

4,8

8 mA

185 µA

CMOS

OTHER

R-PBGA-B84

Not Qualified

85 °C

260

PLASTIC/EPOXY

FBGA

BGA84,9X15,32

RECTANGULAR

GRID ARRAY, FINE PITCH

YES

MATTE TIN

BALL

800 µm

BOTTOM

SAMSUNG SEMICONDUCTOR INC

FBGA, BGA84,9X15,32

compliant

EAR99

8542.32.00.28

Commercial Extended: +0C to +85C

RoHS 2 (2011/65/EU)

2013-06-20

K4T51163QJ-BCF8T

Samsung Semiconductor

Check for Price

Yes

Obsolete

536.8709 Mbit

32MX16

1.8 V

350 ps

533 MHz

8192

CACHE DRAM MODULE

COMMON

4,8

32000000

33.5544 M

3-STATE

4,8

8 mA

200 µA

CMOS

OTHER

R-PBGA-B84

Not Qualified

85 °C

PLASTIC/EPOXY

FBGA

BGA84,9X15,32

RECTANGULAR

GRID ARRAY, FINE PITCH

YES

MATTE TIN

BALL

800 µm

BOTTOM

SAMSUNG SEMICONDUCTOR INC

FBGA, BGA84,9X15,32

compliant

EAR99

8542.32.00.28

Commercial Extended: +0C to +85C

RoHS 2 (2015/863/EU)

2013-06-20

K4T51163QJ-BCF80

Samsung Semiconductor

Check for Price

Yes

Obsolete

536.8709 Mbit

32MX16

1.8 V

350 ps

533 MHz

8192

FOUR BANK PAGE BURST

DDR2 DRAM

AUTO/SELF REFRESH

COMMON

4,8

32000000

33.5544 M

SYNCHRONOUS

3-STATE

YES

4,8

8 mA

200 µA

1.9 V

1.7 V

CMOS

OTHER

R-PBGA-B84

Not Qualified

85 °C

PLASTIC/EPOXY

TFBGA

BGA84,9X15,32

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

YES

TIN SILVER COPPER

BALL

800 µm

BOTTOM

1.2 mm

12.5 mm

7.5 mm

SAMSUNG SEMICONDUCTOR INC

TFBGA, BGA84,9X15,32

compliant

EAR99

8542.32.00.28

Commercial Extended: +0C to +85C

RoHS 2 (2015/863/EU)

2013-06-20

BGA

K4T51163QJ-BCF70

Samsung Semiconductor

Check for Price

Yes

Obsolete

536.8709 Mbit

32MX16

1.8 V

400 ps

400 MHz

8192

FOUR BANK PAGE BURST

DDR2 DRAM

AUTO/SELF REFRESH

COMMON

4,8

32000000

33.5544 M

SYNCHRONOUS

3-STATE

YES

4,8

8 mA

180 µA

1.9 V

1.7 V

CMOS

OTHER

R-PBGA-B84

Not Qualified

85 °C

260

PLASTIC/EPOXY

TFBGA

BGA84,9X15,32

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

YES

TIN SILVER COPPER

BALL

800 µm

BOTTOM

1.2 mm

12.5 mm

7.5 mm

SAMSUNG SEMICONDUCTOR INC

TFBGA, BGA84,9X15,32

compliant

EAR99

8542.32.00.28

Commercial Extended: +0C to +85C

RoHS 2 (2011/65/EU)

2013-06-20

BGA

K4T51163QJ-BCE6T

Samsung Semiconductor

Check for Price

Yes

Obsolete

536.8709 Mbit

32MX16

1.8 V

450 ps

333 MHz

8192

CACHE DRAM MODULE

COMMON

4,8

32000000

33.5544 M

3-STATE

4,8

8 mA

170 µA

CMOS

OTHER

R-PBGA-B84

Not Qualified

85 °C

260

PLASTIC/EPOXY

FBGA

BGA84,9X15,32

RECTANGULAR

GRID ARRAY, FINE PITCH

YES

TIN SILVER COPPER

BALL

800 µm

BOTTOM

SAMSUNG SEMICONDUCTOR INC

FBGA, BGA84,9X15,32

compliant

EAR99

8542.32.00.28

Commercial Extended: +0C to +85C

RoHS 2 (2015/863/EU)

2024-01-23

167

2004

100

YES

1333-86-4

DRC Conflict Free Undeterminable

FMD

K4T51163QJ-BCE70

Samsung Semiconductor

Check for Price

Yes

Obsolete

536.8709 Mbit

32MX16

1.8 V

400 ps

400 MHz

8192

FOUR BANK PAGE BURST

DDR2 DRAM

AUTO/SELF REFRESH

COMMON

4,8

32000000

33.5544 M

SYNCHRONOUS

3-STATE

YES

4,8

8 mA

185 µA

1.9 V

1.7 V

CMOS

OTHER

R-PBGA-B84

Not Qualified

85 °C

260

PLASTIC/EPOXY

TFBGA

BGA84,9X15,32

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

YES

TIN SILVER COPPER

BALL

800 µm

BOTTOM

1.2 mm

12.5 mm

7.5 mm

SAMSUNG SEMICONDUCTOR INC

TFBGA, BGA84,9X15,32

compliant

EAR99

8542.32.00.28

Commercial Extended: +0C to +85C

RoHS 2 (2011/65/EU)

2013-06-20

BGA

K4T51163QJ-BCE60

Samsung Semiconductor

Check for Price

Yes

Obsolete

536.8709 Mbit

32MX16

1.8 V

450 ps

333 MHz

8192

FOUR BANK PAGE BURST

DDR2 DRAM

AUTO/SELF REFRESH

COMMON

4,8

32000000

33.5544 M

SYNCHRONOUS

3-STATE

YES

4,8

8 mA

170 µA

1.9 V

1.7 V

CMOS

OTHER

R-PBGA-B84

Not Qualified

85 °C

260

PLASTIC/EPOXY

TFBGA

BGA84,9X15,32

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

YES

Tin/Silver/Copper (Sn/Ag/Cu)

BALL

800 µm

BOTTOM

1.2 mm

12.5 mm

7.5 mm

SAMSUNG SEMICONDUCTOR INC

TFBGA, BGA84,9X15,32

compliant

EAR99

8542.32.00.28

Commercial Extended: +0C to +85C

RoHS 2 (2011/65/EU)

2013-06-20

BGA

[object Object],[object Object],[object ... more

Parametric results for: K4T51163QJ under DRAMs