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K4T51043QC-ZCCC
Samsung Semiconductor
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Check for Price | Yes | Yes | Obsolete | 536.8709 Mbit | 4 | 128MX4 | 1.8 V | 600 ps | 200 MHz | 8192 | DDR2 DRAM | COMMON | 4,8 | 128000000 | 134.2177 M | 3-STATE | 4,8 | 8 mA | 220 µA | CMOS | OTHER | R-PBGA-B60 | Not Qualified | e1 | 3 | 95 °C | 260 | 60 | PLASTIC/EPOXY | FBGA | BGA60,9X11,32 | RECTANGULAR | GRID ARRAY, FINE PITCH | YES | TIN SILVER COPPER | BALL | 800 µm | BOTTOM | SAMSUNG SEMICONDUCTOR INC | FBGA, BGA60,9X11,32 | compliant | EAR99 | 8542.32.00.28 | |||||||||||||||
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K4T51043QC-ZCCC0
Samsung Semiconductor
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Check for Price | Yes | Obsolete | 536.8709 Mbit | 4 | 128MX4 | 1.8 V | 600 ps | 200 MHz | 8192 | FOUR BANK PAGE BURST | DDR2 DRAM | AUTO/SELF REFRESH | COMMON | 4,8 | 1 | 1 | 128000000 | 134.2177 M | SYNCHRONOUS | 3-STATE | YES | 4,8 | 8 mA | 220 µA | 1.9 V | 1.7 V | CMOS | OTHER | R-PBGA-B60 | Not Qualified | e1 | 3 | 85 °C | 260 | 60 | PLASTIC/EPOXY | TFBGA | BGA60,9X11,32 | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | YES | TIN SILVER COPPER | BALL | 800 µm | BOTTOM | 1.2 mm | 11 mm | 10 mm | SAMSUNG SEMICONDUCTOR INC | TFBGA, BGA60,9X11,32 | compliant | EAR99 | 8542.32.00.28 | BGA | 60 | |||
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K4T51043QC-ZCCCT
Samsung Semiconductor
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Check for Price | Yes | Obsolete | 536.8709 Mbit | 4 | 128MX4 | 1.8 V | 600 ps | 200 MHz | 8192 | FOUR BANK PAGE BURST | DDR2 DRAM | AUTO/SELF REFRESH | COMMON | 4,8 | 1 | 1 | 128000000 | 134.2177 M | SYNCHRONOUS | 3-STATE | YES | 4,8 | 8 mA | 220 µA | 1.9 V | 1.7 V | CMOS | COMMERCIAL EXTENDED | R-PBGA-B60 | Not Qualified | 3 | 85 °C | 260 | 60 | PLASTIC/EPOXY | TFBGA | BGA63,9X11,32 | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | YES | BALL | 800 µm | BOTTOM | 1.2 mm | 11 mm | 10 mm | SAMSUNG SEMICONDUCTOR INC | TFBGA, BGA63,9X11,32 | compliant | EAR99 | 8542.32.00.28 | BGA | 60 |