Parametric results for: K4T1G164QQ-HCD60 under DRAMs

All Filters Access Mode Access Time-Max Additional Feature JESD-30 Code Length Manufacturer Memory Density Memory IC Type Memory Width Number of Functions Number of Ports Number of Terminals Number of Words Number of Words Code Operating Mode Operating Temperature-Max Operating Temperature-Min Organization Package Body Material Package Code Package Shape Package Style Supply Voltage-Nom (Vsup) Access Mode (1)

MULTI BANK PAGE BURST 1

1 hit Apply

Access Time-Max (1)

450 ps 1

1 hit Apply

AUTO/SELF REFRESH 1

1 hit Apply

R-PBGA-B84 1

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13 mm 1

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Manufacturer (1)

Samsung Semiconductor 1

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Memory Density (1)

1.0737 Gbit 1

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DDR DRAM 1

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Memory Width (1)

16 1

1 hit Apply

1.0 1

1 hit Apply

1 1

1 hit Apply

84 1

1 hit Apply

67.1089 M 1

1 hit Apply

6.4E7 1

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SYNCHRONOUS 1

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95.0 °C 1

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0.0 °C 1

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Organization (1)

64MX16 1

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PLASTIC/EPOXY 1

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TFBGA 1

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RECTANGULAR 1

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GRID ARRAY, THIN PROFILE, FINE PITCH 1

1 hit Apply

Supply Voltage-Nom (Vsup) (1)

1.8 V 1

1 hit Apply