Parametric results for: K4T1G164QF-BIE6T under DRAMs

All Filters Access Time-Max Clock Frequency-Max (fCLK) I/O Type Interleaved Burst Length JESD-30 Code Manufacturer Memory Density Memory IC Type Memory Width Number of Terminals Number of Words Number of Words Code Organization Output Characteristics Package Body Material Package Code Package Equivalence Code Package Shape Package Style Refresh Cycles Supply Voltage-Nom (Vsup) Access Time-Max (1)

450 ps 1

1 hit Apply

Clock Frequency-Max (fCLK) (1)

333 MHz 1

1 hit Apply

COMMON 1

1 hit Apply

4,8 1

1 hit Apply

R-PBGA-B84 1

1 hit Apply

Manufacturer (1)

Samsung Semiconductor 1

1 hit Apply

Memory Density (1)

1.0737 Gbit 1

1 hit Apply

DDR2 DRAM 1

1 hit Apply

Memory Width (1)

16 1

1 hit Apply

84 1

1 hit Apply

67.1089 M 1

1 hit Apply

6.4E7 1

1 hit Apply

Organization (1)

64MX16 1

1 hit Apply

3-STATE 1

1 hit Apply

PLASTIC/EPOXY 1

1 hit Apply

FBGA 1

1 hit Apply

BGA84,9X15,32 1

1 hit Apply

RECTANGULAR 1

1 hit Apply

GRID ARRAY, FINE PITCH 1

1 hit Apply

Refresh Cycles (1)

8192 1

1 hit Apply

Supply Voltage-Nom (Vsup) (1)

1.8 V 1

1 hit Apply