Parametric results for: K4T1G084QF-BIE60 under DRAMs

All Filters Access Mode Access Time-Max Additional Feature Clock Frequency-Max (fCLK) I/O Type Interleaved Burst Length JESD-30 Code Length Manufacturer Memory Density Memory IC Type Memory Width Number of Functions Number of Ports Number of Terminals Number of Words Number of Words Code Operating Mode Organization Output Characteristics Package Body Material Package Code Package Equivalence Code Package Shape Package Style Refresh Cycles Supply Voltage-Nom (Vsup) Access Mode (1)

MULTI BANK PAGE BURST 1

1 hit Apply

Access Time-Max (1)

450 ps 1

1 hit Apply

AUTO/SELF REFRESH 1

1 hit Apply

Clock Frequency-Max (fCLK) (1)

333 MHz 1

1 hit Apply

COMMON 1

1 hit Apply

4,8 1

1 hit Apply

R-PBGA-B60 1

1 hit Apply

9.5 mm 1

1 hit Apply

Manufacturer (1)

Samsung Semiconductor 1

1 hit Apply

Memory Density (1)

1.0737 Gbit 1

1 hit Apply

DDR2 DRAM 1

1 hit Apply

Memory Width (1)

8 1

1 hit Apply

1.0 1

1 hit Apply

1 1

1 hit Apply

60 1

1 hit Apply

134.2177 M 1

1 hit Apply

1.28E8 1

1 hit Apply

SYNCHRONOUS 1

1 hit Apply

Organization (1)

128MX8 1

1 hit Apply

3-STATE 1

1 hit Apply

PLASTIC/EPOXY 1

1 hit Apply

TFBGA 1

1 hit Apply

BGA60,9X11,32 1

1 hit Apply

RECTANGULAR 1

1 hit Apply

GRID ARRAY, THIN PROFILE, FINE PITCH 1

1 hit Apply

Refresh Cycles (1)

8192 1

1 hit Apply

Supply Voltage-Nom (Vsup) (1)

1.8 V 1

1 hit Apply