Parametric results for: K4S64323LH-HN750 under DRAMs

All Filters Access Mode Access Time-Max Additional Feature JESD-30 Code JESD-609 Code Length Manufacturer Memory Density Memory IC Type Memory Width Moisture Sensitivity Level Number of Functions Number of Ports Number of Terminals Number of Words Number of Words Code Operating Mode Operating Temperature-Max Operating Temperature-Min Organization Package Body Material Package Code Package Shape Package Style Supply Voltage-Nom (Vsup) Access Mode (1)

FOUR BANK PAGE BURST 1

1 hit Apply

Access Time-Max (1)

6 ns 1

1 hit Apply

AUTO/SELF REFRESH 1

1 hit Apply

R-PBGA-B90 1

1 hit Apply

e1 1

1 hit Apply

13 mm 1

1 hit Apply

Manufacturer (1)

Samsung Semiconductor 1

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Memory Density (1)

67.1089 Mbit 1

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SYNCHRONOUS DRAM 1

1 hit Apply

Memory Width (1)

32 1

1 hit Apply

3 1

1 hit Apply

1.0 1

1 hit Apply

1 1

1 hit Apply

90 1

1 hit Apply

2.0972 M 1

1 hit Apply

2000000.0 1

1 hit Apply

SYNCHRONOUS 1

1 hit Apply

85.0 °C 1

1 hit Apply

-25.0 °C 1

1 hit Apply

Organization (1)

2MX32 1

1 hit Apply

PLASTIC/EPOXY 1

1 hit Apply

LFBGA 1

1 hit Apply

RECTANGULAR 1

1 hit Apply

GRID ARRAY, LOW PROFILE, FINE PITCH 1

1 hit Apply

Supply Voltage-Nom (Vsup) (1)

2.5 V 1

1 hit Apply