Parametric results for: K4S643232C-TL80T under DRAMs

All Filters Access Time-Max Clock Frequency-Max (fCLK) I/O Type Interleaved Burst Length JESD-30 Code JESD-609 Code Manufacturer Memory Density Memory IC Type Memory Width Number of Terminals Number of Words Number of Words Code Operating Temperature-Max Operating Temperature-Min Organization Output Characteristics Package Body Material Package Code Package Equivalence Code Package Shape Package Style Refresh Cycles Supply Voltage-Nom (Vsup) Access Time-Max (1)

6 ns 1

1 hit Apply

Clock Frequency-Max (fCLK) (1)

125 MHz 1

1 hit Apply

COMMON 1

1 hit Apply

1,2,4,8 1

1 hit Apply

R-PDSO-G86 1

1 hit Apply

e0 1

1 hit Apply

Manufacturer (1)

Samsung Semiconductor 1

1 hit Apply

Memory Density (1)

67.1089 Mbit 1

1 hit Apply

SYNCHRONOUS DRAM 1

1 hit Apply

Memory Width (1)

32 1

1 hit Apply

86 1

1 hit Apply

2.0972 M 1

1 hit Apply

2000000.0 1

1 hit Apply

70.0 °C 1

1 hit Apply

0.0 °C 1

1 hit Apply

Organization (1)

2MX32 1

1 hit Apply

3-STATE 1

1 hit Apply

PLASTIC/EPOXY 1

1 hit Apply

TSSOP 1

1 hit Apply

TSSOP86,.46,20 1

1 hit Apply

RECTANGULAR 1

1 hit Apply

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH 1

1 hit Apply

Refresh Cycles (1)

4096 1

1 hit Apply

Supply Voltage-Nom (Vsup) (1)

3.3 V 1

1 hit Apply