Parametric results for: K4S561632H-UL600 under DRAMs

All Filters Access Mode Access Time-Max Additional Feature JESD-30 Code Length Manufacturer Memory Density Memory IC Type Memory Width Moisture Sensitivity Level Number of Functions Number of Ports Number of Terminals Number of Words Number of Words Code Operating Mode Operating Temperature-Max Operating Temperature-Min Organization Package Body Material Package Code Package Shape Package Style Supply Voltage-Nom (Vsup) Access Mode (1)

FOUR BANK PAGE BURST 1

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Access Time-Max (1)

5 ns 1

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AUTO/SELF REFRESH 1

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R-PDSO-G54 1

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22.22 mm 1

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Manufacturer (1)

Samsung Semiconductor 1

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Memory Density (1)

268.4355 Mbit 1

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SYNCHRONOUS DRAM 1

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Memory Width (1)

16 1

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3 1

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1.0 1

1 hit Apply

1 1

1 hit Apply

54 1

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16.7772 M 1

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1.6E7 1

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SYNCHRONOUS 1

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70.0 °C 1

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0.0 °C 1

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Organization (1)

16MX16 1

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PLASTIC/EPOXY 1

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TSOP2 1

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RECTANGULAR 1

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SMALL OUTLINE, THIN PROFILE 1

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Supply Voltage-Nom (Vsup) (1)

3.3 V 1

1 hit Apply