Parametric results for: K4N56163QF-GC33 under DRAMs

All Filters Access Mode Access Time-Max Additional Feature Clock Frequency-Max (fCLK) I/O Type Interleaved Burst Length JESD-30 Code JESD-609 Code Length Manufacturer Memory Density Memory IC Type Memory Width Number of Functions Number of Ports Number of Terminals Number of Words Number of Words Code Operating Mode Operating Temperature-Max Operating Temperature-Min Organization Output Characteristics Package Body Material Package Code Package Equivalence Code Package Shape Package Style Refresh Cycles Supply Voltage-Nom (Vsup) Access Mode (1)

FOUR BANK PAGE BURST 2

3 hits Apply

Access Time-Max (1)

470 ps 2

3 hits Apply

AUTO/SELF REFRESH 2

3 hits Apply

Clock Frequency-Max (fCLK) (1)

300 MHz 3

3 hits Apply

COMMON 3

3 hits Apply

4,8 3

3 hits Apply

R-PBGA-B84 3

3 hits Apply

e0 1

3 hits Apply

13 mm 2

3 hits Apply

Manufacturer (1)

Samsung Semiconductor 3

3 hits Apply

Memory Density (1)

268.4355 Mbit 3

3 hits Apply

DDR2 DRAM 2 GDDR2 DRAM 1

3 hits Apply

Memory Width (1)

16 3

3 hits Apply

1.0 2

3 hits Apply

1 2

3 hits Apply

84 3

3 hits Apply

16.7772 M 3

3 hits Apply

1.6E7 3

3 hits Apply

SYNCHRONOUS 2

3 hits Apply

95.0 °C 3

3 hits Apply

0.0 °C 3

3 hits Apply

Organization (1)

16MX16 3

3 hits Apply

3-STATE 3

3 hits Apply

PLASTIC/EPOXY 3

3 hits Apply

FBGA 1 TFBGA 2

3 hits Apply

BGA84,9X15,32 3

3 hits Apply

RECTANGULAR 3

3 hits Apply

GRID ARRAY, FINE PITCH 1 GRID ARRAY, THIN PROFILE, FINE PITCH 2

3 hits Apply

Refresh Cycles (1)

8192 3

3 hits Apply

Supply Voltage-Nom (Vsup) (1)

1.8 V 3

3 hits Apply