Parametric results for: K4J52324QH-HJ7A0 under DRAMs

All Filters Access Mode Access Time-Max Additional Feature Clock Frequency-Max (fCLK) I/O Type Interleaved Burst Length JESD-30 Code JESD-609 Code Length Manufacturer Memory Density Memory IC Type Memory Width Moisture Sensitivity Level Number of Functions Number of Ports Number of Terminals Number of Words Number of Words Code Operating Mode Operating Temperature-Max Operating Temperature-Min Organization Output Characteristics Package Body Material Package Code Package Equivalence Code Package Shape Package Style Refresh Cycles Supply Voltage-Nom (Vsup) Access Mode (1)

MULTI BANK PAGE BURST 1

1 hit Apply

Access Time-Max (1)

180 ps 1

1 hit Apply

AUTO/SELF REFRESH 1

1 hit Apply

Clock Frequency-Max (fCLK) (1)

1.3 GHz 1

1 hit Apply

COMMON 1

1 hit Apply

4,8 1

1 hit Apply

R-PBGA-B136 1

1 hit Apply

e1 1

1 hit Apply

14 mm 1

1 hit Apply

Manufacturer (1)

Samsung Semiconductor 1

1 hit Apply

Memory Density (1)

536.8709 Mbit 1

1 hit Apply

GDDR3 DRAM 1

1 hit Apply

Memory Width (1)

32 1

1 hit Apply

3 1

1 hit Apply

1.0 1

1 hit Apply

1 1

1 hit Apply

136 1

1 hit Apply

16.7772 M 1

1 hit Apply

1.6E7 1

1 hit Apply

SYNCHRONOUS 1

1 hit Apply

85.0 °C 1

1 hit Apply

0.0 °C 1

1 hit Apply

Organization (1)

16MX32 1

1 hit Apply

3-STATE 1

1 hit Apply

PLASTIC/EPOXY 1

1 hit Apply

TFBGA 1

1 hit Apply

BGA136,12X17,32 1

1 hit Apply

RECTANGULAR 1

1 hit Apply

GRID ARRAY, THIN PROFILE, FINE PITCH 1

1 hit Apply

Refresh Cycles (1)

8192 1

1 hit Apply

Supply Voltage-Nom (Vsup) (1)

2.05 V 1

1 hit Apply