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K4H560838E-GLA2
Samsung Semiconductor
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Check for Price | No | No | Obsolete | 268.4355 Mbit | 8 | 32MX8 | 2.5 V | 750 ps | 133 MHz | 8192 | FOUR BANK PAGE BURST | DDR1 DRAM | AUTO/SELF REFRESH | COMMON | 2,4,8 | 1 | 1 | 32000000 | 33.5544 M | SYNCHRONOUS | 3-STATE | YES | 2,4,8 | 3 mA | 250 µA | 2.7 V | 2.3 V | CMOS | COMMERCIAL | R-PBGA-B60 | Not Qualified | e0 | 70 °C | 60 | PLASTIC/EPOXY | TBGA | BGA60,9X12,40/32 | RECTANGULAR | GRID ARRAY, THIN PROFILE | YES | TIN LEAD | BALL | 1 mm | BOTTOM | 1.2 mm | 14 mm | 8 mm | SAMSUNG SEMICONDUCTOR INC | BGA | TBGA, BGA60,9X12,40/32 | 60 | compliant | EAR99 | 8542.32.00.24 | ||
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K4H560838E-GLA20
Samsung Semiconductor
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Check for Price | No | No | Obsolete | 268.4355 Mbit | 8 | 32MX8 | 2.5 V | 750 ps | FOUR BANK PAGE BURST | DDR1 DRAM | AUTO/SELF REFRESH | 1 | 1 | 32000000 | 33.5544 M | SYNCHRONOUS | YES | 2.7 V | 2.3 V | CMOS | COMMERCIAL | R-PBGA-B60 | Not Qualified | e0 | 70 °C | 60 | PLASTIC/EPOXY | TBGA | RECTANGULAR | GRID ARRAY, THIN PROFILE | YES | TIN LEAD | BALL | 1 mm | BOTTOM | 1.2 mm | 14 mm | 8 mm | SAMSUNG SEMICONDUCTOR INC | BGA | TBGA, | 60 | compliant | EAR99 | 8542.32.00.24 |