Parametric results for: K4H511638J-BLB3T under DRAMs

All Filters Access Time-Max Clock Frequency-Max (fCLK) I/O Type Interleaved Burst Length JESD-30 Code JESD-609 Code Manufacturer Memory Density Memory IC Type Memory Width Moisture Sensitivity Level Number of Terminals Number of Words Number of Words Code Operating Temperature-Max Operating Temperature-Min Organization Output Characteristics Package Body Material Package Code Package Equivalence Code Package Shape Package Style Refresh Cycles Supply Voltage-Nom (Vsup) Access Time-Max (1)

700 ps 1

1 hit Apply

Clock Frequency-Max (fCLK) (1)

166 MHz 1

1 hit Apply

COMMON 1

1 hit Apply

2,4,8 1

1 hit Apply

R-PBGA-B60 1

1 hit Apply

e3 1

1 hit Apply

Manufacturer (1)

Samsung Semiconductor 1

1 hit Apply

Memory Density (1)

536.8709 Mbit 1

1 hit Apply

DDR1 DRAM 1

1 hit Apply

Memory Width (1)

16 1

1 hit Apply

1 1

1 hit Apply

60 1

1 hit Apply

33.5544 M 1

1 hit Apply

3.2E7 1

1 hit Apply

70.0 °C 1

1 hit Apply

0.0 °C 1

1 hit Apply

Organization (1)

32MX16 1

1 hit Apply

3-STATE 1

1 hit Apply

PLASTIC/EPOXY 1

1 hit Apply

BGA 1

1 hit Apply

BGA60,9X12,40/32 1

1 hit Apply

RECTANGULAR 1

1 hit Apply

GRID ARRAY 1

1 hit Apply

Refresh Cycles (1)

8192 1

1 hit Apply

Supply Voltage-Nom (Vsup) (1)

2.5 V 1

1 hit Apply