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Parametric » Memory » DRAMs

Parametric results for: K4H510438C-ZCB3 under DRAMs

Select parts from the table below to compare.

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Select Parts		Part Number

		K4H510438C-ZCB3 Samsung Semiconductor
		K4H510438C-ZCB30 Samsung Semiconductor
		K4H510438C-ZCB3T Samsung Semiconductor

				Most Relevant								Technical																		Compliance			Operating Conditions			Physical											Dimensions			Other
Composite Price	Pbfree Code	Rohs Code	Part Life Cycle Code	Memory Density	Memory Width	Organization	Supply Voltage-Nom (Vsup)	Access Time-Max	Clock Frequency-Max (fCLK)	Refresh Cycles	Access Mode	Memory IC Type	Additional Feature	I/O Type	Interleaved Burst Length	Number of Functions	Number of Ports	Number of Words Code	Number of Words	Operating Mode	Output Characteristics	Self Refresh	Sequential Burst Length	Standby Current-Max	Supply Current-Max	Supply Voltage-Max (Vsup)	Supply Voltage-Min (Vsup)	Technology	Temperature Grade	JESD-30 Code	Qualification Status	JESD-609 Code	Moisture Sensitivity Level	Operating Temperature-Max	Peak Reflow Temperature (Cel)	Number of Terminals	Package Body Material	Package Code	Package Equivalence Code	Package Shape	Package Style	Surface Mount	Terminal Finish	Terminal Form	Terminal Pitch	Terminal Position	Seated Height-Max	Length	Width	Ihs Manufacturer	Reach Compliance Code	ECCN Code	HTS Code	Part Package Code	Package Description	Pin Count

Check for Price

Yes

Yes

Obsolete

536.8709 Mbit

4

128MX4

2.5 V

700 ps

166 MHz

8192

DDR1 DRAM

COMMON

2,4,8

128000000

134.2177 M

3-STATE

2,4,8

5 mA

360 µA

CMOS

COMMERCIAL

R-PBGA-B60

Not Qualified

e1

3

70 °C

260

60

PLASTIC/EPOXY

BGA

BGA60,9X12,40/32

RECTANGULAR

GRID ARRAY

YES

TIN SILVER COPPER

BALL

800 µm

BOTTOM

SAMSUNG SEMICONDUCTOR INC

unknown

EAR99

8542.32.00.28

Check for Price

Yes

Obsolete

536.8709 Mbit

4

128MX4

2.5 V

700 ps

166 MHz

8192

FOUR BANK PAGE BURST

DDR1 DRAM

AUTO/SELF REFRESH

COMMON

2,4,8

1

1

128000000

134.2177 M

SYNCHRONOUS

3-STATE

YES

2,4,8

5 mA

360 µA

2.7 V

2.3 V

CMOS

COMMERCIAL

R-PBGA-B60

Not Qualified

e1

3

70 °C

60

PLASTIC/EPOXY

TFBGA

BGA60,9X12,40/32

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

YES

TIN SILVER COPPER

BALL

800 µm

BOTTOM

1.2 mm

12 mm

10 mm

SAMSUNG SEMICONDUCTOR INC

compliant

EAR99

8542.32.00.28

BGA

TFBGA, BGA60,9X12,40/32

60

Check for Price

Yes

Yes

Obsolete

536.8709 Mbit

4

128MX4

2.5 V

700 ps

166 MHz

8192

DDR1 DRAM

COMMON

2,4,8

128000000

134.2177 M

3-STATE

2,4,8

5 mA

360 µA

CMOS

COMMERCIAL

R-PBGA-B60

Not Qualified

e3

1

70 °C

60

PLASTIC/EPOXY

BGA

BGA60,9X12,40/32

RECTANGULAR

GRID ARRAY

YES

MATTE TIN

BALL

800 µm

BOTTOM

SAMSUNG SEMICONDUCTOR INC

compliant

EAR99

8542.32.00.28

BGA, BGA60,9X12,40/32

Compare

K4H510438C-ZCB3

Samsung Semiconductor

Check for Price

Yes

Yes

Obsolete

536.8709 Mbit

4

128MX4

2.5 V

700 ps

166 MHz

8192

DDR1 DRAM

COMMON

2,4,8

128000000

134.2177 M

3-STATE

2,4,8

5 mA

360 µA

CMOS

COMMERCIAL

R-PBGA-B60

Not Qualified

e1

3

70 °C

260

60

PLASTIC/EPOXY

BGA

BGA60,9X12,40/32

RECTANGULAR

GRID ARRAY

YES

TIN SILVER COPPER

BALL

800 µm

BOTTOM

SAMSUNG SEMICONDUCTOR INC

unknown

EAR99

8542.32.00.28

K4H510438C-ZCB30

Samsung Semiconductor

Check for Price

Yes

Obsolete

536.8709 Mbit

4

128MX4

2.5 V

700 ps

166 MHz

8192

FOUR BANK PAGE BURST

DDR1 DRAM

AUTO/SELF REFRESH

COMMON

2,4,8

1

1

128000000

134.2177 M

SYNCHRONOUS

3-STATE

YES

2,4,8

5 mA

360 µA

2.7 V

2.3 V

CMOS

COMMERCIAL

R-PBGA-B60

Not Qualified

e1

3

70 °C

60

PLASTIC/EPOXY

TFBGA

BGA60,9X12,40/32

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

YES

TIN SILVER COPPER

BALL

800 µm

BOTTOM

1.2 mm

12 mm

10 mm

SAMSUNG SEMICONDUCTOR INC

compliant

EAR99

8542.32.00.28

BGA

TFBGA, BGA60,9X12,40/32

60

K4H510438C-ZCB3T

Samsung Semiconductor

Check for Price

Yes

Yes

Obsolete

536.8709 Mbit

4

128MX4

2.5 V

700 ps

166 MHz

8192

DDR1 DRAM

COMMON

2,4,8

128000000

134.2177 M

3-STATE

2,4,8

5 mA

360 µA

CMOS

COMMERCIAL

R-PBGA-B60

Not Qualified

e3

1

70 °C

60

PLASTIC/EPOXY

BGA

BGA60,9X12,40/32

RECTANGULAR

GRID ARRAY

YES

MATTE TIN

BALL

800 µm

BOTTOM

SAMSUNG SEMICONDUCTOR INC

compliant

EAR99

8542.32.00.28

BGA, BGA60,9X12,40/32