Parametric results for: K4F660412D-TP450 under DRAMs

All Filters Access Time-Max I/O Type JESD-30 Code Manufacturer Memory Density Memory IC Type Memory Width Number of Terminals Number of Words Number of Words Code Operating Temperature-Max Operating Temperature-Min Organization Output Characteristics Package Body Material Package Code Package Equivalence Code Package Shape Package Style Refresh Cycles Supply Voltage-Nom (Vsup) Access Time-Max (1)

45 ns 1

1 hit Apply

COMMON 1

1 hit Apply

R-PDSO-G32 1

1 hit Apply

Manufacturer (1)

Samsung Semiconductor 1

1 hit Apply

Memory Density (1)

67.1089 Mbit 1

1 hit Apply

FAST PAGE DRAM 1

1 hit Apply

Memory Width (1)

4 1

1 hit Apply

32 1

1 hit Apply

16.7772 M 1

1 hit Apply

1.6E7 1

1 hit Apply

85.0 °C 1

1 hit Apply

-40.0 °C 1

1 hit Apply

Organization (1)

16MX4 1

1 hit Apply

3-STATE 1

1 hit Apply

PLASTIC/EPOXY 1

1 hit Apply

TSOP 1

1 hit Apply

TSOP32,.46 1

1 hit Apply

RECTANGULAR 1

1 hit Apply

SMALL OUTLINE, THIN PROFILE 1

1 hit Apply

Refresh Cycles (1)

8192 1

1 hit Apply

Supply Voltage-Nom (Vsup) (1)

3.3 V 1

1 hit Apply