Parametric results for: K4F170812C-FC500 under DRAMs

All Filters Access Mode Access Time-Max Additional Feature JESD-30 Code Length Manufacturer Memory Density Memory IC Type Memory Width Number of Functions Number of Ports Number of Terminals Number of Words Number of Words Code Operating Mode Operating Temperature-Max Operating Temperature-Min Organization Package Body Material Package Code Package Shape Package Style Supply Voltage-Nom (Vsup) Access Mode (1)

FAST PAGE 1

1 hit Apply

Access Time-Max (1)

50 ns 1

1 hit Apply

RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH 1

1 hit Apply

R-PDSO-G28 1

1 hit Apply

18.41 mm 1

1 hit Apply

Manufacturer (1)

Samsung Semiconductor 1

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Memory Density (1)

16.7772 Mbit 1

1 hit Apply

FAST PAGE DRAM 1

1 hit Apply

Memory Width (1)

8 1

1 hit Apply

1.0 1

1 hit Apply

1 1

1 hit Apply

28 1

1 hit Apply

2.0972 M 1

1 hit Apply

2000000.0 1

1 hit Apply

ASYNCHRONOUS 1

1 hit Apply

70.0 °C 1

1 hit Apply

0.0 °C 1

1 hit Apply

Organization (1)

2MX8 1

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PLASTIC/EPOXY 1

1 hit Apply

TSOP2 1

1 hit Apply

RECTANGULAR 1

1 hit Apply

SMALL OUTLINE, THIN PROFILE 1

1 hit Apply

Supply Voltage-Nom (Vsup) (1)

3.3 V 1

1 hit Apply