Parametric results for: K4E661612C-TC500 under DRAMs

All Filters Access Mode Access Time-Max Additional Feature JESD-30 Code Length Manufacturer Memory Density Memory IC Type Memory Width Number of Functions Number of Ports Number of Terminals Number of Words Number of Words Code Operating Mode Operating Temperature-Max Operating Temperature-Min Organization Package Body Material Package Code Package Shape Package Style Supply Voltage-Nom (Vsup) Access Mode (1)

FAST PAGE WITH EDO 1

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Access Time-Max (1)

50 ns 1

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RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH 1

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R-PDSO-G50 1

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20.95 mm 1

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Manufacturer (1)

Samsung Semiconductor 1

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Memory Density (1)

67.1089 Mbit 1

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EDO DRAM 1

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Memory Width (1)

16 1

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1.0 1

1 hit Apply

1 1

1 hit Apply

50 1

1 hit Apply

4.1943 M 1

1 hit Apply

4000000.0 1

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ASYNCHRONOUS 1

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70.0 °C 1

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0.0 °C 1

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Organization (1)

4MX16 1

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PLASTIC/EPOXY 1

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TSOP2 1

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RECTANGULAR 1

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SMALL OUTLINE, THIN PROFILE 1

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Supply Voltage-Nom (Vsup) (1)

3.3 V 1

1 hit Apply