Parametric results for: K4E640812E-JI60T under DRAMs

All Filters Access Time-Max I/O Type JESD-30 Code Manufacturer Memory Density Memory IC Type Memory Width Number of Terminals Number of Words Number of Words Code Operating Temperature-Max Operating Temperature-Min Organization Output Characteristics Package Body Material Package Code Package Equivalence Code Package Shape Package Style Refresh Cycles Supply Voltage-Nom (Vsup) Access Time-Max (1)

60 ns 1

1 hit Apply

COMMON 1

1 hit Apply

R-PDSO-J32 1

1 hit Apply

Manufacturer (1)

Samsung Semiconductor 1

1 hit Apply

Memory Density (1)

67.1089 Mbit 1

1 hit Apply

EDO DRAM 1

1 hit Apply

Memory Width (1)

8 1

1 hit Apply

32 1

1 hit Apply

8.3886 M 1

1 hit Apply

8000000.0 1

1 hit Apply

85.0 °C 1

1 hit Apply

-40.0 °C 1

1 hit Apply

Organization (1)

8MX8 1

1 hit Apply

3-STATE 1

1 hit Apply

PLASTIC/EPOXY 1

1 hit Apply

SOJ 1

1 hit Apply

SOJ32,.44 1

1 hit Apply

RECTANGULAR 1

1 hit Apply

SMALL OUTLINE 1

1 hit Apply

Refresh Cycles (1)

4096 1

1 hit Apply

Supply Voltage-Nom (Vsup) (1)

3.3 V 1

1 hit Apply