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Parametric » Memory » DRAMs

Parametric results for: K4E640812E-JI60 under DRAMs

Select parts from the table below to compare.

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Select Parts		Part Number

		K4E640812E-JI60T Samsung Semiconductor
		K4E640812E-JI600 Samsung Semiconductor
		K4E640812E-JI60 Samsung Semiconductor

			Most Relevant							Technical																Compliance		Operating Conditions		Physical										Dimensions			Other
Composite Price	Rohs Code	Part Life Cycle Code	Memory Density	Memory Width	Organization	Supply Voltage-Nom (Vsup)	Access Time-Max	Refresh Cycles	Access Mode	Memory IC Type	Additional Feature	I/O Type	Number of Functions	Number of Ports	Number of Words Code	Number of Words	Operating Mode	Output Characteristics	Self Refresh	Standby Current-Max	Supply Current-Max	Supply Voltage-Max (Vsup)	Supply Voltage-Min (Vsup)	Technology	Temperature Grade	JESD-30 Code	Qualification Status	Operating Temperature-Max	Operating Temperature-Min	Number of Terminals	Package Body Material	Package Code	Package Equivalence Code	Package Shape	Package Style	Surface Mount	Terminal Form	Terminal Pitch	Terminal Position	Seated Height-Max	Length	Width	Ihs Manufacturer	Package Description	Reach Compliance Code	ECCN Code	HTS Code	Part Package Code	Pin Count

Check for Price Buy

No

Active

67.1089 Mbit

8

8MX8

3.3 V

60 ns

4096

EDO DRAM

COMMON

8000000

8.3886 M

3-STATE

NO

1 mA

100 µA

CMOS

INDUSTRIAL

R-PDSO-J32

Not Qualified

85 °C

-40 °C

32

PLASTIC/EPOXY

SOJ

SOJ32,.44

RECTANGULAR

SMALL OUTLINE

YES

J BEND

1.27 mm

DUAL

SAMSUNG SEMICONDUCTOR INC

SOJ, SOJ32,.44

compliant

EAR99

8542.32.00.02

Check for Price Buy

No

Active

67.1089 Mbit

8

8MX8

3.3 V

60 ns

4096

EDO DRAM

COMMON

8000000

8.3886 M

3-STATE

NO

1 mA

100 µA

CMOS

INDUSTRIAL

R-PDSO-J32

Not Qualified

85 °C

-40 °C

32

PLASTIC/EPOXY

SOJ

SOJ32,.44

RECTANGULAR

SMALL OUTLINE

YES

J BEND

1.27 mm

DUAL

SAMSUNG SEMICONDUCTOR INC

SOJ, SOJ32,.44

compliant

EAR99

8542.32.00.02

Check for Price Buy

Obsolete

67.1089 Mbit

8

8MX8

3.3 V

60 ns

FAST PAGE WITH EDO

EDO DRAM

RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH

1

1

8000000

8.3886 M

ASYNCHRONOUS

3.6 V

3 V

CMOS

INDUSTRIAL

R-PDSO-J32

Not Qualified

85 °C

-40 °C

32

PLASTIC/EPOXY

SOJ

RECTANGULAR

SMALL OUTLINE

YES

J BEND

1.27 mm

DUAL

3.76 mm

20.96 mm

10.16 mm

SAMSUNG SEMICONDUCTOR INC

SOJ,

unknown

EAR99

8542.32.00.02

SOJ

32

Compare

K4E640812E-JI60T

Samsung Semiconductor

Check for Price Buy

No

Active

67.1089 Mbit

8

8MX8

3.3 V

60 ns

4096

EDO DRAM

COMMON

8000000

8.3886 M

3-STATE

NO

1 mA

100 µA

CMOS

INDUSTRIAL

R-PDSO-J32

Not Qualified

85 °C

-40 °C

32

PLASTIC/EPOXY

SOJ

SOJ32,.44

RECTANGULAR

SMALL OUTLINE

YES

J BEND

1.27 mm

DUAL

SAMSUNG SEMICONDUCTOR INC

SOJ, SOJ32,.44

compliant

EAR99

8542.32.00.02

K4E640812E-JI600

Samsung Semiconductor

Check for Price Buy

No

Active

67.1089 Mbit

8

8MX8

3.3 V

60 ns

4096

EDO DRAM

COMMON

8000000

8.3886 M

3-STATE

NO

1 mA

100 µA

CMOS

INDUSTRIAL

R-PDSO-J32

Not Qualified

85 °C

-40 °C

32

PLASTIC/EPOXY

SOJ

SOJ32,.44

RECTANGULAR

SMALL OUTLINE

YES

J BEND

1.27 mm

DUAL

SAMSUNG SEMICONDUCTOR INC

SOJ, SOJ32,.44

compliant

EAR99

8542.32.00.02

K4E640812E-JI60

Samsung Semiconductor

Check for Price Buy

Obsolete

67.1089 Mbit

8

8MX8

3.3 V

60 ns

FAST PAGE WITH EDO

EDO DRAM

RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH

1

1

8000000

8.3886 M

ASYNCHRONOUS

3.6 V

3 V

CMOS

INDUSTRIAL

R-PDSO-J32

Not Qualified

85 °C

-40 °C

32

PLASTIC/EPOXY

SOJ

RECTANGULAR

SMALL OUTLINE

YES

J BEND

1.27 mm

DUAL

3.76 mm

20.96 mm

10.16 mm

SAMSUNG SEMICONDUCTOR INC

SOJ,

unknown

EAR99

8542.32.00.02

SOJ

32