Parametric results for: K4E171611D-JC45T under DRAMs

All Filters Access Time-Max I/O Type JESD-30 Code Manufacturer Memory Density Memory IC Type Memory Width Number of Terminals Number of Words Number of Words Code Operating Temperature-Max Operating Temperature-Min Organization Output Characteristics Package Body Material Package Code Package Equivalence Code Package Shape Package Style Refresh Cycles Supply Voltage-Nom (Vsup) Access Time-Max (1)

45 ns 1

1 hit Apply

COMMON 1

1 hit Apply

R-PDSO-J42 1

1 hit Apply

Manufacturer (1)

Samsung Semiconductor 1

1 hit Apply

Memory Density (1)

16.7772 Mbit 1

1 hit Apply

EDO DRAM 1

1 hit Apply

Memory Width (1)

16 1

1 hit Apply

42 1

1 hit Apply

1.0486 M 1

1 hit Apply

1000000.0 1

1 hit Apply

70.0 °C 1

1 hit Apply

0.0 °C 1

1 hit Apply

Organization (1)

1MX16 1

1 hit Apply

3-STATE 1

1 hit Apply

PLASTIC/EPOXY 1

1 hit Apply

SOJ 1

1 hit Apply

SOJ42,.44 1

1 hit Apply

RECTANGULAR 1

1 hit Apply

SMALL OUTLINE 1

1 hit Apply

Refresh Cycles (1)

4096 1

1 hit Apply

Supply Voltage-Nom (Vsup) (1)

5 V 1

1 hit Apply