Parametric results for: K4D263238M-QC45 under DRAMs

All Filters Access Mode Access Time-Max Additional Feature Clock Frequency-Max (fCLK) I/O Type Interleaved Burst Length JESD-30 Code JESD-609 Code Length Manufacturer Memory Density Memory IC Type Memory Width Number of Functions Number of Ports Number of Terminals Number of Words Number of Words Code Operating Mode Operating Temperature-Max Operating Temperature-Min Organization Output Characteristics Package Body Material Package Code Package Equivalence Code Package Shape Package Style Refresh Cycles Supply Voltage-Nom (Vsup) Access Mode (1)

FOUR BANK PAGE BURST 2

2 hits Apply

Access Time-Max (1)

700 ps 2

2 hits Apply

AUTO/SELF REFRESH 2

2 hits Apply

Clock Frequency-Max (fCLK) (1)

222 MHz 1

2 hits Apply

COMMON 1

2 hits Apply

2,4,8 1

2 hits Apply

R-PQFP-G100 2

2 hits Apply

e0 1

2 hits Apply

20 mm 2

2 hits Apply

Manufacturer (1)

Samsung Semiconductor 2

2 hits Apply

Memory Density (1)

134.2177 Mbit 2

2 hits Apply

DDR DRAM 1 DDR1 DRAM 1

2 hits Apply

Memory Width (1)

32 2

2 hits Apply

1.0 2

2 hits Apply

1 2

2 hits Apply

100 2

2 hits Apply

4.1943 M 2

2 hits Apply

4000000.0 2

2 hits Apply

SYNCHRONOUS 2

2 hits Apply

65.0 °C 2

2 hits Apply

0.0 °C 2

2 hits Apply

Organization (1)

4MX32 2

2 hits Apply

3-STATE 1

2 hits Apply

PLASTIC/EPOXY 2

2 hits Apply

TQFP 2

2 hits Apply

TQFP100,.7X.9 1

2 hits Apply

RECTANGULAR 2

2 hits Apply

FLATPACK, THIN PROFILE 2

2 hits Apply

Refresh Cycles (1)

4096 1

2 hits Apply

Supply Voltage-Nom (Vsup) (1)

2.5 V 2

2 hits Apply