Parametric results for: K4B2G1646B-HPH9 under DRAMs

All Filters Access Mode Access Time-Max Additional Feature Clock Frequency-Max (fCLK) I/O Type Interleaved Burst Length JESD-30 Code JESD-609 Code Length Manufacturer Memory Density Memory IC Type Memory Width Moisture Sensitivity Level Number of Functions Number of Ports Number of Terminals Number of Words Number of Words Code Operating Mode Operating Temperature-Max Operating Temperature-Min Organization Output Characteristics Package Body Material Package Code Package Equivalence Code Package Shape Package Style Refresh Cycles Supply Voltage-Nom (Vsup) Access Mode (1)

MULTI BANK PAGE BURST 2

3 hits Apply

Access Time-Max (1)

255 ps 3

3 hits Apply

AUTO/SELF REFRESH 2

3 hits Apply

Clock Frequency-Max (fCLK) (1)

667 MHz 3

3 hits Apply

COMMON 3

3 hits Apply

8 3

3 hits Apply

R-PBGA-B96 3

3 hits Apply

e1 3

3 hits Apply

13.3 mm 2

3 hits Apply

Manufacturer (1)

Samsung Semiconductor 3

3 hits Apply

Memory Density (1)

2.1475 Gbit 3

3 hits Apply

CACHE DRAM MODULE 2 DDR3 DRAM 1

3 hits Apply

Memory Width (1)

16 3

3 hits Apply

1 1

3 hits Apply

1.0 2

3 hits Apply

1 2

3 hits Apply

96 3

3 hits Apply

134.2177 M 3

3 hits Apply

1.28E8 3

3 hits Apply

SYNCHRONOUS 2

3 hits Apply

95.0 °C 3

3 hits Apply

-40.0 °C 3

3 hits Apply

Organization (1)

128MX16 3

3 hits Apply

3-STATE 3

3 hits Apply

PLASTIC/EPOXY 3

3 hits Apply

FBGA 1 TFBGA 2

3 hits Apply

BGA96,9X16,32 3

3 hits Apply

RECTANGULAR 3

3 hits Apply

GRID ARRAY, FINE PITCH 1 GRID ARRAY, THIN PROFILE, FINE PITCH 2

3 hits Apply

Refresh Cycles (1)

8192 3

3 hits Apply

Supply Voltage-Nom (Vsup) (1)

1.5 V 3

3 hits Apply