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Parametric » Memory » DRAMs

Parametric results for: K4B1G1646C-ZCF7 under DRAMs

Select parts from the table below to compare.

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Select Parts		Part Number

		K4B1G1646C-ZCF70 Samsung Semiconductor
		K4B1G1646C-ZCF7 Samsung Semiconductor
		K4B1G1646C-ZCF7T Samsung Semiconductor

				Most Relevant								Technical																Compliance		Operating Conditions				Physical										Dimensions			Other
Composite Price	Pbfree Code	Rohs Code	Part Life Cycle Code	Memory Density	Memory Width	Organization	Supply Voltage-Nom (Vsup)	Access Time-Max	Clock Frequency-Max (fCLK)	Refresh Cycles	Access Mode	Memory IC Type	Additional Feature	I/O Type	Interleaved Burst Length	Number of Functions	Number of Ports	Number of Words Code	Number of Words	Operating Mode	Output Characteristics	Self Refresh	Sequential Burst Length	Supply Voltage-Max (Vsup)	Supply Voltage-Min (Vsup)	Technology	Temperature Grade	JESD-30 Code	Qualification Status	Moisture Sensitivity Level	Operating Temperature-Max	Peak Reflow Temperature (Cel)	Time@Peak Reflow Temperature-Max (s)	Number of Terminals	Package Body Material	Package Code	Package Equivalence Code	Package Shape	Package Style	Surface Mount	Terminal Form	Terminal Pitch	Terminal Position	Seated Height-Max	Length	Width	Ihs Manufacturer	Part Package Code	Package Description	Pin Count	Reach Compliance Code	ECCN Code	HTS Code

Check for Price

Yes

Obsolete

1.0737 Gbit

16

64MX16

1.5 V

400 ps

400 MHz

8192

MULTI BANK PAGE BURST

DDR3 DRAM

AUTO/SELF REFRESH

COMMON

8

1

1

64000000

67.1089 M

SYNCHRONOUS

3-STATE

YES

8

1.575 V

1.452 V

CMOS

COMMERCIAL EXTENDED

R-PBGA-B112

Not Qualified

85 °C

NOT SPECIFIED

NOT SPECIFIED

112

PLASTIC/EPOXY

TFBGA

BGA112,11X22,32

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

YES

BALL

800 µm

BOTTOM

1.2 mm

18 mm

11 mm

SAMSUNG SEMICONDUCTOR INC

BGA

TFBGA, BGA112,11X22,32

112

compliant

EAR99

8542.32.00.32

Check for Price

Yes

Yes

Obsolete

1.0737 Gbit

16

64MX16

1.5 V

400 ps

400 MHz

8192

DDR3 DRAM

COMMON

8

64000000

67.1089 M

3-STATE

8

CMOS

R-PBGA-B112

Not Qualified

3

260

112

PLASTIC/EPOXY

FBGA

BGA112,11X22,32

RECTANGULAR

GRID ARRAY, FINE PITCH

YES

BALL

800 µm

BOTTOM

SAMSUNG SEMICONDUCTOR INC

FBGA, BGA112,11X22,32

compliant

EAR99

8542.32.00.32

Check for Price

Yes

Active

1.0737 Gbit

16

64MX16

1.5 V

400 ps

400 MHz

8192

DDR3 DRAM

COMMON

8

64000000

67.1089 M

3-STATE

8

CMOS

R-PBGA-B112

Not Qualified

112

PLASTIC/EPOXY

FBGA

BGA112,11X22,32

RECTANGULAR

GRID ARRAY, FINE PITCH

YES

BALL

800 µm

BOTTOM

SAMSUNG SEMICONDUCTOR INC

compliant

EAR99

8542.32.00.32

Compare

K4B1G1646C-ZCF70

Samsung Semiconductor

Check for Price

Yes

Obsolete

1.0737 Gbit

16

64MX16

1.5 V

400 ps

400 MHz

8192

MULTI BANK PAGE BURST

DDR3 DRAM

AUTO/SELF REFRESH

COMMON

8

1

1

64000000

67.1089 M

SYNCHRONOUS

3-STATE

YES

8

1.575 V

1.452 V

CMOS

COMMERCIAL EXTENDED

R-PBGA-B112

Not Qualified

85 °C

NOT SPECIFIED

NOT SPECIFIED

112

PLASTIC/EPOXY

TFBGA

BGA112,11X22,32

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

YES

BALL

800 µm

BOTTOM

1.2 mm

18 mm

11 mm

SAMSUNG SEMICONDUCTOR INC

BGA

TFBGA, BGA112,11X22,32

112

compliant

EAR99

8542.32.00.32

K4B1G1646C-ZCF7

Samsung Semiconductor

Check for Price

Yes

Yes

Obsolete

1.0737 Gbit

16

64MX16

1.5 V

400 ps

400 MHz

8192

DDR3 DRAM

COMMON

8

64000000

67.1089 M

3-STATE

8

CMOS

R-PBGA-B112

Not Qualified

3

260

112

PLASTIC/EPOXY

FBGA

BGA112,11X22,32

RECTANGULAR

GRID ARRAY, FINE PITCH

YES

BALL

800 µm

BOTTOM

SAMSUNG SEMICONDUCTOR INC

FBGA, BGA112,11X22,32

compliant

EAR99

8542.32.00.32

K4B1G1646C-ZCF7T

Samsung Semiconductor

Check for Price

Yes

Active

1.0737 Gbit

16

64MX16

1.5 V

400 ps

400 MHz

8192

DDR3 DRAM

COMMON

8

64000000

67.1089 M

3-STATE

8

CMOS

R-PBGA-B112

Not Qualified

112

PLASTIC/EPOXY

FBGA

BGA112,11X22,32

RECTANGULAR

GRID ARRAY, FINE PITCH

YES

BALL

800 µm

BOTTOM

SAMSUNG SEMICONDUCTOR INC

compliant

EAR99

8542.32.00.32