Parametric results for: K3N6V1000E-GC100 under MASK ROMs

All Filters Access Time-Max Alternate Memory Width JESD-30 Code Length Manufacturer Memory Density Memory IC Type Memory Width Number of Functions Number of Terminals Number of Words Number of Words Code Operating Mode Operating Temperature-Max Operating Temperature-Min Organization Package Body Material Package Code Package Shape Package Style Supply Voltage-Nom (Vsup) Access Time-Max (1)

100 ns 1

1 hit Apply

8 1

1 hit Apply

R-PDSO-G44 1

1 hit Apply

28.5 mm 1

1 hit Apply

Manufacturer (1)

Samsung Semiconductor 1

1 hit Apply

Memory Density (1)

33.5544 Mbit 1

1 hit Apply

MASK ROM 1

1 hit Apply

Memory Width (1)

16 1

1 hit Apply

1.0 1

1 hit Apply

44 1

1 hit Apply

2.0972 M 1

1 hit Apply

2000000.0 1

1 hit Apply

ASYNCHRONOUS 1

1 hit Apply

70.0 °C 1

1 hit Apply

0.0 °C 1

1 hit Apply

Organization (1)

2MX16 1

1 hit Apply

PLASTIC/EPOXY 1

1 hit Apply

SOP 1

1 hit Apply

RECTANGULAR 1

1 hit Apply

SMALL OUTLINE 1

1 hit Apply

Supply Voltage-Nom (Vsup) (1)

3.3 V 1

1 hit Apply