Findchips: Parametric Search Results for K3N4C1000D-DC


Select Parts		Part Number

		K3N4C1000D-DC Samsung Semiconductor
		K3N4C1000D-DC150 Samsung Semiconductor
		K3N4C1000D-DC120 Samsung Semiconductor
		K3N4C1000D-DC100 Samsung Semiconductor
		K3N4C1000D-DC10 Samsung Semiconductor
		K3N4C1000D-DC12 Samsung Semiconductor
		K3N4C1000D-DC15 Samsung Semiconductor

			Most Relevant					Technical														Compliance			Operating Conditions	Physical											Dimensions			Other
Composite Price	Rohs Code	Part Life Cycle Code	Memory Density	Memory Width	Organization	Supply Voltage-Nom (Vsup)	Access Time-Max	Memory IC Type	Additional Feature	Alternate Memory Width	Number of Functions	Number of Words Code	Number of Words	Operating Mode	Parallel/Serial	Standby Current-Max	Supply Current-Max	Supply Voltage-Max (Vsup)	Supply Voltage-Min (Vsup)	Technology	Temperature Grade	JESD-30 Code	Qualification Status	JESD-609 Code	Operating Temperature-Max	Number of Terminals	Package Body Material	Package Code	Package Equivalence Code	Package Shape	Package Style	Surface Mount	Terminal Finish	Terminal Form	Terminal Pitch	Terminal Position	Seated Height-Max	Length	Width	Ihs Manufacturer	Package Description	Reach Compliance Code	ECCN Code	HTS Code	Part Package Code	Pin Count

Check for Price

Obsolete

SAMSUNG SEMICONDUCTOR INC

unknown

EAR99

8542.32.00.71

Check for Price

Obsolete

8.3886 Mbit

512KX16

5 V

150 ns

MASK ROM

512000

524.288 k

ASYNCHRONOUS

PARALLEL

50 µA

5.5 V

4.5 V

CMOS

COMMERCIAL

R-PDIP-T42

Not Qualified

70 °C

PLASTIC/EPOXY

DIP

RECTANGULAR

IN-LINE

THROUGH-HOLE

2.54 mm

DUAL

5.08 mm

52.42 mm

15.24 mm

SAMSUNG SEMICONDUCTOR INC

DIP,

unknown

EAR99

8542.32.00.71

DIP

Check for Price

Obsolete

8.3886 Mbit

512KX16

5 V

120 ns

MASK ROM

512000

524.288 k

ASYNCHRONOUS

PARALLEL

50 µA

5.5 V

4.5 V

CMOS

COMMERCIAL

R-PDIP-T42

Not Qualified

70 °C

PLASTIC/EPOXY

DIP

RECTANGULAR

IN-LINE

THROUGH-HOLE

2.54 mm

DUAL

5.08 mm

52.42 mm

15.24 mm

SAMSUNG SEMICONDUCTOR INC

DIP,

unknown

EAR99

8542.32.00.71

DIP

Check for Price

Obsolete

8.3886 Mbit

512KX16

5 V

100 ns

MASK ROM

512000

524.288 k

ASYNCHRONOUS

PARALLEL

50 µA

5.5 V

4.5 V

CMOS

COMMERCIAL

R-PDIP-T42

Not Qualified

70 °C

PLASTIC/EPOXY

DIP

RECTANGULAR

IN-LINE

THROUGH-HOLE

2.54 mm

DUAL

5.08 mm

52.42 mm

15.24 mm

SAMSUNG SEMICONDUCTOR INC

DIP,

unknown

EAR99

8542.32.00.71

DIP

Check for Price

Obsolete

8.3886 Mbit

512KX16

5 V

100 ns

MASK ROM

ALL INPUTS AND OUTPUTS TTL COMPATIBLE

512000

524.288 k

ASYNCHRONOUS

PARALLEL

50 µA

5.5 V

4.5 V

CMOS

COMMERCIAL

R-PDIP-T42

Not Qualified

70 °C

PLASTIC/EPOXY

DIP

DIP42,.6

RECTANGULAR

IN-LINE

TIN LEAD

THROUGH-HOLE

2.54 mm

DUAL

5.08 mm

52.42 mm

15.24 mm

SAMSUNG SEMICONDUCTOR INC

DIP, DIP42,.6

compliant

EAR99

8542.32.00.71

DIP

Check for Price

Obsolete

8.3886 Mbit

512KX16

5 V

120 ns

MASK ROM

ALL INPUTS AND OUTPUTS TTL COMPATIBLE

512000

524.288 k

ASYNCHRONOUS

PARALLEL

50 µA

5.5 V

4.5 V

CMOS

COMMERCIAL

R-PDIP-T42

Not Qualified

70 °C

PLASTIC/EPOXY

DIP

DIP42,.6

RECTANGULAR

IN-LINE

TIN LEAD

THROUGH-HOLE

2.54 mm

DUAL

5.08 mm

52.42 mm

15.24 mm

SAMSUNG SEMICONDUCTOR INC

DIP, DIP42,.6

compliant

EAR99

8542.32.00.71

DIP

Check for Price

Obsolete

8.3886 Mbit

512KX16

5 V

150 ns

MASK ROM

ALL INPUTS AND OUTPUTS TTL COMPATIBLE

512000

524.288 k

ASYNCHRONOUS

PARALLEL

50 µA

5.5 V

4.5 V

CMOS

COMMERCIAL

R-PDIP-T42

Not Qualified

70 °C

PLASTIC/EPOXY

DIP

DIP42,.6

RECTANGULAR

IN-LINE

TIN LEAD

THROUGH-HOLE

2.54 mm

DUAL

5.08 mm

52.42 mm

15.24 mm

SAMSUNG SEMICONDUCTOR INC

DIP, DIP42,.6

compliant

EAR99

8542.32.00.71

DIP

Compare

K3N4C1000D-DC

Samsung Semiconductor

Check for Price

Obsolete

SAMSUNG SEMICONDUCTOR INC

unknown

EAR99

8542.32.00.71

K3N4C1000D-DC150

Samsung Semiconductor

Check for Price

Obsolete

8.3886 Mbit

512KX16

5 V

150 ns

MASK ROM

512000

524.288 k

ASYNCHRONOUS

PARALLEL

50 µA

5.5 V

4.5 V

CMOS

COMMERCIAL

R-PDIP-T42

Not Qualified

70 °C

PLASTIC/EPOXY

DIP

RECTANGULAR

IN-LINE

THROUGH-HOLE

2.54 mm

DUAL

5.08 mm

52.42 mm

15.24 mm

SAMSUNG SEMICONDUCTOR INC

DIP,

unknown

EAR99

8542.32.00.71

DIP

K3N4C1000D-DC120

Samsung Semiconductor

Check for Price

Obsolete

8.3886 Mbit

512KX16

5 V

120 ns

MASK ROM

512000

524.288 k

ASYNCHRONOUS

PARALLEL

50 µA

5.5 V

4.5 V

CMOS

COMMERCIAL

R-PDIP-T42

Not Qualified

70 °C

PLASTIC/EPOXY

DIP

RECTANGULAR

IN-LINE

THROUGH-HOLE

2.54 mm

DUAL

5.08 mm

52.42 mm

15.24 mm

SAMSUNG SEMICONDUCTOR INC

DIP,

unknown

EAR99

8542.32.00.71

DIP

K3N4C1000D-DC100

Samsung Semiconductor

Check for Price

Obsolete

8.3886 Mbit

512KX16

5 V

100 ns

MASK ROM

512000

524.288 k

ASYNCHRONOUS

PARALLEL

50 µA

5.5 V

4.5 V

CMOS

COMMERCIAL

R-PDIP-T42

Not Qualified

70 °C

PLASTIC/EPOXY

DIP

RECTANGULAR

IN-LINE

THROUGH-HOLE

2.54 mm

DUAL

5.08 mm

52.42 mm

15.24 mm

SAMSUNG SEMICONDUCTOR INC

DIP,

unknown

EAR99

8542.32.00.71

DIP

K3N4C1000D-DC10

Samsung Semiconductor

Check for Price

Obsolete

8.3886 Mbit

512KX16

5 V

100 ns

MASK ROM

ALL INPUTS AND OUTPUTS TTL COMPATIBLE

512000

524.288 k

ASYNCHRONOUS

PARALLEL

50 µA

5.5 V

4.5 V

CMOS

COMMERCIAL

R-PDIP-T42

Not Qualified

70 °C

PLASTIC/EPOXY

DIP

DIP42,.6

RECTANGULAR

IN-LINE

TIN LEAD

THROUGH-HOLE

2.54 mm

DUAL

5.08 mm

52.42 mm

15.24 mm

SAMSUNG SEMICONDUCTOR INC

DIP, DIP42,.6

compliant

EAR99

8542.32.00.71

DIP

K3N4C1000D-DC12

Samsung Semiconductor

Check for Price

Obsolete

8.3886 Mbit

512KX16

5 V

120 ns

MASK ROM

ALL INPUTS AND OUTPUTS TTL COMPATIBLE

512000

524.288 k

ASYNCHRONOUS

PARALLEL

50 µA

5.5 V

4.5 V

CMOS

COMMERCIAL

R-PDIP-T42

Not Qualified

70 °C

PLASTIC/EPOXY

DIP

DIP42,.6

RECTANGULAR

IN-LINE

TIN LEAD

THROUGH-HOLE

2.54 mm

DUAL

5.08 mm

52.42 mm

15.24 mm

SAMSUNG SEMICONDUCTOR INC

DIP, DIP42,.6

compliant

EAR99

8542.32.00.71

DIP

K3N4C1000D-DC15

Samsung Semiconductor

Check for Price

Obsolete

8.3886 Mbit

512KX16

5 V

150 ns

MASK ROM

ALL INPUTS AND OUTPUTS TTL COMPATIBLE

512000

524.288 k

ASYNCHRONOUS

PARALLEL

50 µA

5.5 V

4.5 V

CMOS

COMMERCIAL

R-PDIP-T42

Not Qualified

70 °C

PLASTIC/EPOXY

DIP

DIP42,.6

RECTANGULAR

IN-LINE

TIN LEAD

THROUGH-HOLE

2.54 mm

DUAL

5.08 mm

52.42 mm

15.24 mm

SAMSUNG SEMICONDUCTOR INC

DIP, DIP42,.6

compliant

EAR99

8542.32.00.71

DIP

Parametric results for: K3N4C1000D-DC under MASK ROMs