Parametric results for: JANTXV1N935BUR-1 under Zener Diodes
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JANTXV1N935BUR-1
Microsemi Corporation
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Check for Price | No | No | Transferred | 500 mW | 9 V | SILICON | ZENER DIODE | SINGLE | YES | 1 | ZENER | METALLURGICALLY BONDED | 0.9 mV/°C | 5 % | Not Qualified | O-LELF-R2 | e0 | MIL-19500 | DO-213AA | 1 | ISOLATED | 2 | GLASS | ROUND | LONG FORM | TIN LEAD | WRAP AROUND | END | MICROSEMI CORP | DO-213AA | HERMETIC SEALED, LEADLESS, GLASS, LL34, MELF-2 | 2 | unknown | EAR99 | 8541.10.00.50 | ||||
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JANTXV1N935BUR-1
Microchip Technology Inc
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Check for Price | No | Active | 500 mW | 9 V | SILICON | ZENER DIODE | SINGLE | YES | 1 | ZENER | METALLURGICALLY BONDED | 0.9 mV/°C | 5 % | Qualified | O-LELF-R2 | e0 | MIL-19500 | DO-213AA | 1 | ISOLATED | 2 | GLASS | ROUND | LONG FORM | TIN LEAD | WRAP AROUND | END | MICROCHIP TECHNOLOGY INC | HERMETIC SEALED, LEADLESS, GLASS, LL34, MELF-2 | compliant | |||||||||
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JANTXV1N935BUR-1
Compensated Devices Inc
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Check for Price | Transferred | 500 mW | 9 V | SILICON | ZENER DIODE | SINGLE | YES | 1 | ZENER | METALLURGICALLY BONDED | 0.9 mV/°C | 5 % | Not Qualified | O-LELF-R2 | MIL-19500/156M | DO-213AA | 175 °C | -65 °C | ISOLATED | 2 | GLASS | ROUND | LONG FORM | WRAP AROUND | END | COMPENSATED DEVICES INC | HERMETIC SEALED, GLASS PACKAGE-2 | unknown | |||||||||||
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JANTXV1N935BUR-1/TR
Microchip Technology Inc
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Check for Price | Active | 500 mW | 9 V | SILICON | ZENER DIODE | SINGLE | YES | 1 | ZENER | METALLURGICALLY BONDED | 0.9 mV/°C | 5 % | Qualified | O-LELF-R2 | e0 | MIL-19500 | DO-213AA | 1 | ISOLATED | 2 | GLASS | ROUND | LONG FORM | TIN LEAD | WRAP AROUND | END | MICROCHIP TECHNOLOGY INC | unknown | EAR99 | 8541.10.00.50 | |||||||||
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JANTXV1N935BUR-1
Defense Logistics Agency
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Check for Price | Active | 500 mW | 9 V | SILICON | ZENER DIODE | SINGLE | YES | 1 | ZENER | 5 % | Qualified | O-LELF-R2 | MIL-19500/156M | DO-213AA | ISOLATED | 2 | GLASS | ROUND | LONG FORM | WRAP AROUND | END | DEFENSE LOGISTICS AGENCY | HERMETIC SEALED, GLASS PACKAGE-2 | unknown |