Parametric results for: JANTXV1N6462US under Transient Suppressors

All Filters Additional Feature Breakdown Voltage-Min Case Connection Clamping Voltage-Max Configuration Diode Element Material Diode Type JESD-30 Code JESD-609 Code Manufacturer Number of Elements Polarity Power Dissipation-Max Rep Pk Reverse Voltage-Max Surface Mount Technology

METALLURGICALLY BODED 1

6 hits Apply

Breakdown Voltage-Min (1)

6.5 V 1

6 hits Apply

ISOLATED 6

6 hits Apply

Clamping Voltage-Max (1)

11 V 3

6 hits Apply

Configuration (1)

SINGLE 6

6 hits Apply

Diode Element Material (1)

SILICON 6

6 hits Apply

Diode Type (1)

TRANS VOLTAGE SUPPRESSOR DIODE 6

6 hits Apply

O-MELF-R2 1 O-XELF-R2 5

6 hits Apply

e0 3

6 hits Apply

Manufacturer (6)

Bkc Semiconductors Inc 1 Defense Logistics Agency 1 Microchip Technology Inc 1 Microsemi Corporation 1 Micross Components 1 Semtech Corporation 1

6 hits Apply

Number of Elements (1)

1 6

6 hits Apply

Polarity (1)

UNIDIRECTIONAL 6

6 hits Apply

Power Dissipation-Max (2)

2.5 W 5 5 W 1

Min (W) - Max (W)

6 hits Apply

Rep Pk Reverse Voltage-Max (1)

6 V 6

6 hits Apply

Surface Mount (1)

YES 6

6 hits Apply

Technology (1)

AVALANCHE 6

6 hits Apply