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JANTXV1N5309UR-1
Microchip Technology Inc
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$41.6318 | No | Active | 2.25 V | 3 mA | 500 mW | SILICON | CURRENT REGULATOR DIODE | SINGLE | YES | 100 V | 1 | FIELD EFFECT | METALLURGICALLY BONDED | Qualified | O-LELF-R2 | e0 | MIL-19500 | DO-213AB | 1 | 175 °C | -65 °C | ISOLATED | 2 | GLASS | ROUND | LONG FORM | TIN LEAD | WRAP AROUND | END | MICROCHIP TECHNOLOGY INC | HERMETIC SEALED, GLASS, LL41, MELF-2 | compliant | ||||||||||||
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JANTXV1N5309-1
Microchip Technology Inc
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$51.6465 | No | Active | 2.25 V | 3 mA | 500 mW | SILICON | CURRENT REGULATOR DIODE | SINGLE | NO | 100 V | 1 | FIELD EFFECT | 300 kΩ | Qualified | O-LALF-W2 | e0 | MIL-PRF-19500 | DO-7 | 175 °C | -65 °C | ISOLATED | 2 | GLASS | ROUND | LONG FORM | TIN LEAD | WIRE | AXIAL | MICROCHIP TECHNOLOGY INC | DO-35, 2 PIN | compliant | |||||||||||||
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JANTXV1N5309-1
Knox Semiconductor Inc
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Check for Price | No | Transferred | 2.25 V | 3 mA | 500 mW | SILICON | CURRENT REGULATOR DIODE | SINGLE | NO | 100 V | 1 | FIELD EFFECT | 300 kΩ | Not Qualified | O-LALF-W2 | e0 | MIL-19500/463 | DO-7 | ISOLATED | 2 | GLASS | ROUND | LONG FORM | TIN LEAD | WIRE | AXIAL | KNOX SEMICONDUCTORS INC | GLASS PACKAGE-2 | unknown | |||||||||||||||
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JANTXV1N5309-1
MACOM
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Check for Price | Yes | Transferred | 2.25 V | 3 mA | 500 mW | SILICON | CURRENT REGULATOR DIODE | SINGLE | NO | 1 | FIELD EFFECT | HIGH SOURCE IMPEDANCE | Qualified | O-LALF-W2 | MIL-19500 | DO-7 | 175 °C | -65 °C | NOT SPECIFIED | NOT SPECIFIED | ISOLATED | 2 | GLASS | ROUND | LONG FORM | WIRE | AXIAL | M/A-COM TECHNOLOGY SOLUTIONS INC | compliant | EAR99 | 8541.10.00.70 | |||||||||||||
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JANTXV1N5309
Compensated Devices Inc
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Check for Price | Obsolete | 2.25 V | 3 mA | 500 mW | SILICON | CURRENT REGULATOR DIODE | SINGLE | NO | 100 V | 1 | FIELD EFFECT | 29 kΩ | Not Qualified | O-XALF-W2 | MIL-19500/463G | DO-7 | 175 °C | -65 °C | ISOLATED | 2 | UNSPECIFIED | ROUND | LONG FORM | WIRE | AXIAL | COMPENSATED DEVICES INC | HERMETIC SEALED PACKAGE-2 | unknown | ||||||||||||||||
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JANTXV1N5309
CRYSTALONICS Inc
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Check for Price | Contact Manufacturer | 2.25 V | 3 mA | 600 mW | SILICON | CURRENT REGULATOR DIODE | SINGLE | NO | 100 V | 1 | FIELD EFFECT | Not Qualified | O-LALF-W2 | DO-7 | 200 °C | -55 °C | ISOLATED | 2 | GLASS | ROUND | LONG FORM | WIRE | AXIAL | CRYSTALONICS INC | O-LALF-W2 | unknown | EAR99 | 8541.10.00.70 | DO-7 | 2 | ||||||||||||||
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JANTXV1N5309-1
VPT Components
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Check for Price | Yes | Active | 2.25 V | 3 mA | 500 mW | SILICON | CURRENT REGULATOR DIODE | SINGLE | NO | 100 V | 1 | FIELD EFFECT | HIGH SOURCE IMPEDANCE | Qualified | O-LALF-W2 | MIL-19500 | DO-7 | 175 °C | -65 °C | ISOLATED | 2 | GLASS | ROUND | LONG FORM | WIRE | AXIAL | VPT COMPONENTS | compliant | EAR99 | 8541.10.00.70 | ||||||||||||||
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JANTXV1N5309-1
Micrometrics Inc
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Check for Price | Obsolete | 2.25 V | 3 mA | 600 mW | SILICON | CURRENT REGULATOR DIODE | SINGLE | NO | 100 V | 1 | 300 kΩ | ISOLATED | MICROMETRICS INC | unknown | EAR99 | |||||||||||||||||||||||||||||
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JANTXV1N5309UR-1
Compensated Devices Inc
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Check for Price | Transferred | 2.25 V | 3 mA | 500 mW | SILICON | CURRENT REGULATOR DIODE | SINGLE | YES | 100 V | 1 | FIELD EFFECT | METALLURGICALLY BONDED | 29 kΩ | Not Qualified | O-XELF-R2 | MIL-19500/463G | DO-213AB | 175 °C | -65 °C | ISOLATED | 2 | UNSPECIFIED | ROUND | LONG FORM | WRAP AROUND | END | COMPENSATED DEVICES INC | HERMETIC SEALED PACKAGE-2 | unknown | |||||||||||||||
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JANTXV1N5309UR-1
Microsemi Corporation
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Check for Price | No | No | Transferred | 2.25 V | 3 mA | 500 mW | SILICON | CURRENT REGULATOR DIODE | SINGLE | YES | 1 | FIELD EFFECT | METALLURGICALLY BONDED | Not Qualified | O-LELF-R2 | e0 | MIL-19500 | DO-213AB | 1 | 175 °C | -65 °C | ISOLATED | 2 | GLASS | ROUND | LONG FORM | TIN LEAD | WRAP AROUND | END | MICROSEMI CORP | HERMETIC SEALED, GLASS, LL41, MELF-2 | not_compliant | EAR99 | 8541.10.00.70 | DO-213AB | 2 | Microsemi Corporation |