Parametric results for: JANTX2N6786 under Power Field-Effect Transistors

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Manufacturer Part Number: jantx2n6786
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JANTX2N6786
Harris Semiconductor
Check for Price Obsolete N-CHANNEL NO SINGLE WITH BUILT-IN DIODE 3 400 V 1 1.25 A 3.6 Ω RADIATION HARDENED 15 pF METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 15 W 5.5 A SWITCHING SILICON 65 ns 35 ns TO-205AF O-MBCY-W3 Not Qualified MILITARY STANDARD (USA) 150 °C DRAIN METAL ROUND CYLINDRICAL NOT SPECIFIED WIRE BOTTOM HARRIS SEMICONDUCTOR unknown EAR99 8541.29.00.95
JANTX2N6786U
International Rectifier
Check for Price No Transferred N-CHANNEL YES 18 400 V 1.25 A 3.6 Ω METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE SWITCHING SILICON R-CQCC-N18 Qualified MILITARY STANDARD (USA) 150 °C NOT SPECIFIED NOT SPECIFIED SOURCE CERAMIC, METAL-SEALED COFIRED RECTANGULAR CHIP CARRIER NO LEAD QUAD INTERNATIONAL RECTIFIER HIREL PRODUCTS LLC unknown EAR99 CHIP CARRIER, R-CQCC-N18
JANTX2N6786U
Infineon Technologies AG
Check for Price No Active N-CHANNEL YES SINGLE 18 400 V 1 1.25 A 3.6 Ω METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 15 W SWITCHING SILICON R-CQCC-N18 e0 Qualified MILITARY STANDARD (USA) 150 °C SOURCE CERAMIC, METAL-SEALED COFIRED RECTANGULAR CHIP CARRIER TIN LEAD NO LEAD QUAD INFINEON TECHNOLOGIES AG not_compliant EAR99 CHIP CARRIER, R-CQCC-N18
JANTX2N6786
Microsemi Corporation
Check for Price No No Obsolete N-CHANNEL NO SINGLE 3 400 V 1 1.25 A 3.6 Ω METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE SILICON TO-39 O-MBCY-W3 e0 Not Qualified METAL ROUND CYLINDRICAL TIN LEAD WIRE BOTTOM MICROSEMI CORP compliant EAR99
JANTX2N6786
Unitrode Corporation
Check for Price Obsolete N-CHANNEL NO SINGLE WITH BUILT-IN DIODE 3 400 V 1 1.25 A 3.6 Ω 15 pF METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 15 W 5.5 A SWITCHING SILICON 65 ns 35 ns TO-205AF O-MBCY-W3 Not Qualified MILITARY STANDARD (USA) 150 °C METAL ROUND CYLINDRICAL WIRE BOTTOM UNITRODE CORP unknown EAR99 8541.29.00.95
JANTX2N6786
Fairchild Semiconductor Corporation
Check for Price No Transferred N-CHANNEL NO SINGLE 1 1.2 A METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 15 W e0 150 °C Tin/Lead (Sn/Pb) FAIRCHILD SEMICONDUCTOR CORP unknown EAR99
JANTX2N6786
Intersil Corporation
Check for Price No Obsolete N-CHANNEL NO SINGLE WITH BUILT-IN DIODE 3 400 V 1 1.25 A 3.6 Ω METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 15 W 5.5 A SWITCHING SILICON TO-205AF O-MBCY-W3 e0 Not Qualified 150 °C METAL ROUND CYLINDRICAL TIN LEAD WIRE BOTTOM INTERSIL CORP not_compliant EAR99
JANTX2N6786
International Rectifier
Check for Price No Transferred N-CHANNEL NO SINGLE WITH BUILT-IN DIODE 3 400 V 1 1.25 A 4.15 Ω AVALANCHE RATED 0.82 mJ METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 5.5 A SWITCHING SILICON TO-205AF O-MBCY-W3 Qualified MIL-19500/556 NOT SPECIFIED NOT SPECIFIED METAL ROUND CYLINDRICAL WIRE BOTTOM INTERNATIONAL RECTIFIER HIREL PRODUCTS LLC unknown EAR99 HERMETIC SEALED, TO-39, 3 PIN BCY 2
JANTX2N6786
Infineon Technologies AG
Check for Price No Active N-CHANNEL NO SINGLE WITH BUILT-IN DIODE 3 400 V 1 1.25 A 4.15 Ω AVALANCHE RATED 0.82 mJ METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 15 W 5.5 A SWITCHING SILICON TO-205AF O-MBCY-W3 e0 Qualified MIL-19500/556 150 °C NOT SPECIFIED NOT SPECIFIED METAL ROUND CYLINDRICAL Tin/Lead (Sn/Pb) WIRE BOTTOM INFINEON TECHNOLOGIES AG unknown EAR99 TO-39, 3 PIN
JANTX2N6786
Defense Logistics Agency
Check for Price Active N-CHANNEL NO SINGLE WITH BUILT-IN DIODE 3 400 V 1 1.25 A 3.6 Ω RADIATION HARDENED METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 5.5 A SWITCHING SILICON TO-205AF O-MBCY-W3 Qualified MILITARY STANDARD (USA) DRAIN METAL ROUND CYLINDRICAL WIRE BOTTOM DEFENSE LOGISTICS AGENCY unknown EAR99