Parametric results for: JANTX1N6640 under Rectifier Diodes
Filter Your Search
1 - 10 of 33 results
|
Select parts from the table below to compare.
Compare
Compare
|
|
JANTX1N6640US
Microchip Technology Inc
|
$8.7543 | No | Active | 300 mA | 1 V | 4 ns | 100 nA | SILICON | RECTIFIER DIODE | SINGLE | YES | 1 | METALLURGICALLY BONDED | GENERAL PURPOSE | 2.5 A | 1 | Qualified | O-XELF-R2 | e0 | MIL-19500/609D | 175 °C | -65 °C | 235 | 20 | ISOLATED | 2 | UNSPECIFIED | ROUND | LONG FORM | Tin/Lead (Sn/Pb) | WRAP AROUND | END | MICROCHIP TECHNOLOGY INC | SURFACE MOUNT PACKAGE-2 | compliant | Microchip | |||||||||||
|
|
JANTX1N6640US/TR
Microchip Technology Inc
|
$8.8243 | Active | 300 mA | 1 V | 4 ns | 100 nA | SILICON | 75 V | RECTIFIER DIODE | SINGLE | YES | 50 V | 1 | GENERAL PURPOSE | 2.5 A | 1 | 50 V | O-LELF-R2 | MIL-PRF-19500 | 175 °C | -65 °C | ISOLATED | 2 | GLASS | ROUND | LONG FORM | WRAP AROUND | END | MICROCHIP TECHNOLOGY INC | compliant | EAR99 | 8541.21.00.40 | |||||||||||||||
|
|
JANTX1N6640US
Cobham Semiconductor Solutions
|
$10.0426 | Transferred | 300 mA | 4 ns | SILICON | RECTIFIER DIODE | SINGLE | YES | 50 V | 1 | METALLURGICALLY BONDED | Not Qualified | O-LELF-R2 | e0 | MIL-19500/578 | ISOLATED | 2 | GLASS | ROUND | LONG FORM | TIN LEAD | WRAP AROUND | END | AEROFLEX/METELICS INC | HERMETIC SEALED GLASS PACKAGE-2 | unknown | EAR99 | 8541.10.00.70 | 2 | ||||||||||||||||||
|
|
JANTX1N6640
Microchip Technology Inc
|
$10.1998 | No | Active | 300 mA | 1 V | 4 ns | 100 nA | SILICON | RECTIFIER DIODE | SINGLE | NO | 1 | METALLURGICALLY BONDED | GENERAL PURPOSE | 2.5 A | 1 | Qualified | O-XALF-W2 | e0 | MIL-19500/609D | DO-35 | 175 °C | -65 °C | ISOLATED | 2 | UNSPECIFIED | ROUND | LONG FORM | TIN LEAD | WIRE | AXIAL | MICROCHIP TECHNOLOGY INC | SIMILAR TO DO-35, 2 PIN | compliant | |||||||||||||
|
|
JANTX1N6640USTR
Microsemi Corporation
|
Check for Price | Transferred | RECTIFIER DIODE | MICROSEMI CORP | unknown | EAR99 | |||||||||||||||||||||||||||||||||||||||||
|
|
JANTX1N6640U
Cobham Semiconductor Solutions
|
Check for Price | Transferred | 300 mA | 4 ns | SILICON | RECTIFIER DIODE | SINGLE | NO | 50 V | 1 | Not Qualified | O-LALF-W2 | e0 | MIL-19500/578 | ISOLATED | 2 | GLASS | ROUND | LONG FORM | TIN LEAD | WIRE | AXIAL | AEROFLEX/METELICS INC | O-LALF-W2 | unknown | EAR99 | 8541.10.00.70 | 2 | |||||||||||||||||||
|
|
JANTX1N6640
Defense Logistics Agency
|
Check for Price | Active | 300 mA | 4 ns | SILICON | RECTIFIER DIODE | SINGLE | NO | 50 V | 1 | METALLURGICALLY BONDED | GENERAL PURPOSE | 1 | Qualified | O-XALF-W2 | MIL-19500/609D | ISOLATED | 2 | UNSPECIFIED | ROUND | LONG FORM | WIRE | AXIAL | DEFENSE LOGISTICS AGENCY | SIMILAR TO DO-35, 2 PIN | unknown | |||||||||||||||||||||
|
|
JANTX1N6640U
Microsemi Corporation
|
Check for Price | Obsolete | 300 mA | 4 ns | SILICON | RECTIFIER DIODE | SINGLE | YES | 50 V | 1 | METALLURGICALLY BONDED | GENERAL PURPOSE | 1 | Not Qualified | O-XELF-R2 | e0 | ISOLATED | 2 | UNSPECIFIED | ROUND | LONG FORM | TIN LEAD | WRAP AROUND | END | MICROSEMI CORP | O-XELF-R2 | compliant | EAR99 | 8541.10.00.70 | 2 | |||||||||||||||||
|
JANTX1N6640
Microsemi Corporation
|
Check for Price | No | No | Transferred | 300 mA | 1 V | 4 ns | 100 nA | SILICON | RECTIFIER DIODE | SINGLE | NO | 1 | METALLURGICALLY BONDED | GENERAL PURPOSE | 2.5 A | 1 | Not Qualified | O-XALF-W2 | e0 | MIL-19500/609D | DO-35 | 175 °C | -65 °C | ISOLATED | 2 | UNSPECIFIED | ROUND | LONG FORM | TIN LEAD | WIRE | AXIAL | MICROSEMI CORP | SIMILAR TO DO-35, 2 PIN | unknown | Microsemi Corporation | EAR99 | 8541.10.00.70 | 2 | DO-35 | |||||||
|
|
JANTX1N6640
Sensitron Semiconductors
|
Check for Price | No | No | Active | 300 mA | 1.1 V | 4 ns | SILICON | RECTIFIER DIODE | SINGLE | NO | 75 V | 1 | METALLURGICALLY BONDED | GENERAL PURPOSE | 2.5 A | 1 | Qualified | O-XALF-W2 | MIL-19500/609D | 175 °C | NOT SPECIFIED | NOT SPECIFIED | ISOLATED | 2 | UNSPECIFIED | ROUND | LONG FORM | WIRE | AXIAL | SENSITRON SEMICONDUCTOR | DO-35, 2 PIN | compliant | EAR99 | 8541.10.00.70 | 2 | DO-35 |