Parametric results for: JANSR2N7555U3 under Power Field-Effect Transistors

All Filters Configuration Drain Current-Max (ID) FET Technology Manufacturer Number of Elements Operating Mode Operating Temperature-Max Part Life Cycle Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount Configuration (1)

SINGLE 2

2 hits Apply

Drain Current-Max (ID) (1)

10 A 2

2 hits Apply

METAL-OXIDE SEMICONDUCTOR 2

2 hits Apply

Manufacturer (2)

Infineon Technologies AG 1 International Rectifier 1

2 hits Apply

Number of Elements (1)

1 2

2 hits Apply

ENHANCEMENT MODE 1

2 hits Apply

150.0 °C 2

2 hits Apply

Active 1 Transferred 1

2 hits Apply

NOT SPECIFIED 1

2 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 2

2 hits Apply

75 W 2

2 hits Apply

Surface Mount (1)

YES 2

2 hits Apply