Parametric results for: JAN2N6762 under Power Field-Effect Transistors

All Filters Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology Feedback Cap-Max (Crss) JEDEC-95 Code JESD-30 Code JESD-609 Code Manufacturer Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Polarity/Channel Type Power Dissipation Ambient-Max Power Dissipation-Max (Abs) Surface Mount

DRAIN 4

4 hits Apply

Configuration (1)

SINGLE WITH BUILT-IN DIODE 4

4 hits Apply

DS Breakdown Voltage-Min (1)

500 V 4

4 hits Apply

Drain Current-Max (ID) (1)

4.5 A 4

4 hits Apply

Drain-source On Resistance-Max (2)

1.5 Ω 1 1.8 Ω 1

Min (Ω) - Max (Ω)

4 hits Apply

METAL-OXIDE SEMICONDUCTOR 4

4 hits Apply

60 pF 1

4 hits Apply

TO-204AA 4

4 hits Apply

O-MBFM-P2 4

4 hits Apply

e0 2

4 hits Apply

Manufacturer (4)

Defense Logistics Agency 1 International Rectifier 1 Microsemi Corporation 1 Unitrode Corporation 1

4 hits Apply

Number of Elements (1)

1 4

4 hits Apply

Number of Terminals (1)

2 4

4 hits Apply

ENHANCEMENT MODE 4

4 hits Apply

150.0 °C 2

4 hits Apply

METAL 4

4 hits Apply

ROUND 4

4 hits Apply

FLANGE MOUNT 4

4 hits Apply

Active 1 Obsolete 3

4 hits Apply

No 1

4 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 4

4 hits Apply

75 W 1

4 hits Apply

75 W 1

4 hits Apply

Surface Mount (1)

NO 4

4 hits Apply