Parametric results for: JAN2N5002 under Power Bipolar Transistors

All Filters Case Connection Collector Current-Max (IC) Collector-Emitter Voltage-Max Configuration DC Current Gain-Min (hFE) JEDEC-95 Code JESD-30 Code JESD-609 Code Manufacturer Number of Elements Number of Terminals Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount Transition Frequency-Nom (fT)

ISOLATED 2

6 hits Apply

Collector Current-Max (IC) (1)

5 A 6

6 hits Apply

Collector-Emitter Voltage-Max (1)

80 V 5

6 hits Apply

Configuration (1)

SINGLE 6

6 hits Apply

DC Current Gain-Min (hFE) (2)

20.0 5 30.0 1

Min - Max

6 hits Apply

TO-59 3

6 hits Apply

O-MUPM-D3 5

6 hits Apply

e0 2

6 hits Apply

Manufacturer (6)

Boca Semiconductor Inc 1 Defense Logistics Agency 1 Microchip Technology Inc 1 Microsemi Corporation 1 New England Semiconductor 1 Semicoa Semiconductors 1

6 hits Apply

Number of Elements (1)

1 6

6 hits Apply

Number of Terminals (1)

3 5

6 hits Apply

175.0 °C 1 200.0 °C 3

Min (°C) - Max (°C)

6 hits Apply

METAL 5

6 hits Apply

ROUND 5

6 hits Apply

POST/STUD MOUNT 5

6 hits Apply

Active 2 Contact Manufacturer 1 Obsolete 2 Transferred 1

6 hits Apply

No 1

6 hits Apply

Polarity/Channel Type (1)

NPN 6

6 hits Apply

50 W 2

6 hits Apply

Surface Mount (1)

NO 6

6 hits Apply

Transition Frequency-Nom (fT) (1)

60 MHz 2

6 hits Apply