Parametric results for: JAN2N3821 under RF Small Signal Field-Effect Transistors

All Filters Configuration DS Breakdown Voltage-Min FET Technology Feedback Cap-Max (Crss) Highest Frequency Band JEDEC-95 Code JESD-30 Code JESD-609 Code Manufacturer Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount Configuration (1)

SINGLE 5

6 hits Apply

DS Breakdown Voltage-Min (1)

50 V 5

6 hits Apply

JUNCTION 4 METAL-OXIDE SEMICONDUCTOR 2

6 hits Apply

3 pF 5

6 hits Apply

Highest Frequency Band (1)

VERY HIGH FREQUENCY BAND 5

6 hits Apply

TO-206AF 2

6 hits Apply

O-MBCY-W4 5

6 hits Apply

e0 2

6 hits Apply

Manufacturer (6)

Defense Logistics Agency 1 Intersil Corporation 1 Microsemi Corporation 1 Motorola Mobility LLC 1 Motorola Semiconductor Products 1 New England Semiconductor 1

6 hits Apply

Number of Elements (1)

1 5

6 hits Apply

Number of Terminals (1)

4 5

6 hits Apply

DEPLETION MODE 5

6 hits Apply

200.0 °C 2

6 hits Apply

METAL 5

6 hits Apply

ROUND 5

6 hits Apply

CYLINDRICAL 5

6 hits Apply

Active 1 Obsolete 4 Transferred 1

6 hits Apply

No 1

6 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 6

6 hits Apply

300 mW 2

6 hits Apply

Surface Mount (1)

NO 6

6 hits Apply