Parametric results for: JAN2N1890 under Small Signal Bipolar Transistors

All Filters Additional Feature Case Connection Collector Current-Max (IC) Collector-Base Capacitance-Max Collector-Emitter Voltage-Max Configuration DC Current Gain-Min (hFE) JEDEC-95 Code JESD-30 Code JESD-609 Code Manufacturer Number of Elements Number of Terminals Operating Temperature-Max Operating Temperature-Min Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Polarity/Channel Type Power Dissipation Ambient-Max Power Dissipation-Max (Abs) Surface Mount Transition Frequency-Nom (fT)

LOW NOISE 2

12 hits Apply

COLLECTOR 6

12 hits Apply

Collector Current-Max (IC) (1)

500 mA 9

12 hits Apply

15 pF 2

12 hits Apply

Collector-Emitter Voltage-Max (1)

60 V 5

12 hits Apply

Configuration (1)

SINGLE 10

12 hits Apply

DC Current Gain-Min (hFE) (1)

100.0 9

12 hits Apply

TO-39 2 TO-5 4

12 hits Apply

O-MBCY-W3 10

12 hits Apply

e0 6

12 hits Apply

Manufacturer (6)

Defense Logistics Agency 2 Microchip Technology Inc 2 Microsemi Corporation 2 New England Semiconductor 2 Raytheon Semiconductor 2 VPT Components 2

12 hits Apply

Number of Elements (1)

1 10

12 hits Apply

Number of Terminals (1)

3 10

12 hits Apply

200.0 °C 6

12 hits Apply

-65.0 °C 2

12 hits Apply

METAL 10

12 hits Apply

ROUND 10

12 hits Apply

CYLINDRICAL 10

12 hits Apply

Active 6 Obsolete 3 Transferred 3

12 hits Apply

No 2

12 hits Apply

Polarity/Channel Type (1)

NPN 10

12 hits Apply

800 mW 2

12 hits Apply

800 mW 2 3 W 2

Min (W) - Max (W)

12 hits Apply

Surface Mount (1)

NO 10

12 hits Apply

Transition Frequency-Nom (fT) (1)

60 MHz 2

12 hits Apply