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Parametric » Diodes » Rectifier Diodes

Parametric results for: JAN1N6626US under Rectifier Diodes

Select parts from the table below to compare.

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Select Parts		Part Number

		JAN1N6626US Microchip Technology Inc
		JAN1N6626US Defense Logistics Agency
		JAN1N6626US Sensitron Semiconductors
		JAN1N6626US Microsemi Corporation

				Most Relevant												Technical					Compliance				Operating Conditions				Physical								Other
Composite Price	Pbfree Code	Rohs Code	Part Life Cycle Code	Output Current-Max	Forward Voltage-Max (VF)	Reverse Recovery Time-Max	Reverse Current-Max	Diode Element Material	Breakdown Voltage-Min	Diode Type	Configuration	Surface Mount	Rep Pk Reverse Voltage-Max	Number of Elements	Technology	Additional Feature	Application	Non-rep Pk Forward Current-Max	Number of Phases	Reverse Test Voltage	Qualification Status	JESD-30 Code	JESD-609 Code	Reference Standard	Operating Temperature-Max	Operating Temperature-Min	Peak Reflow Temperature (Cel)	Time@Peak Reflow Temperature-Max (s)	Case Connection	Number of Terminals	Package Body Material	Package Shape	Package Style	Terminal Finish	Terminal Form	Terminal Position	Ihs Manufacturer	Reach Compliance Code	Package Description	Pin Count	Manufacturer Package Code	ECCN Code	HTS Code

No

Active

1.75 A

1.5 V

30 ns

2 µA

SILICON

220 V

RECTIFIER DIODE

SINGLE

YES

200 V

1

HIGH RELIABILITY

ULTRA FAST RECOVERY

75 A

1

200 V

Qualified

O-LELF-R2

e0

MIL-STD-750; MIL-PRF-19500

150 °C

-65 °C

ISOLATED

2

GLASS

ROUND

LONG FORM

TIN LEAD

WRAP AROUND

END

MICROCHIP TECHNOLOGY INC

compliant

Check for Price

Active

4 A

30 ns

SILICON

RECTIFIER DIODE

SINGLE

YES

1

ULTRA FAST RECOVERY POWER

75 A

1

Qualified

O-LELF-R2

MIL-19500/590F

ISOLATED

2

GLASS

ROUND

LONG FORM

WRAP AROUND

END

DEFENSE LOGISTICS AGENCY

unknown

Check for Price

No

No

Active

4 A

1.4 V

30 ns

SILICON

RECTIFIER DIODE

SINGLE

YES

200 V

1

AVALANCHE

METALLURGICALLY BONDED

ULTRA FAST RECOVERY POWER

75 A

1

Qualified

O-LELF-R2

MIL-19500/590F

175 °C

NOT SPECIFIED

NOT SPECIFIED

ISOLATED

2

GLASS

ROUND

LONG FORM

WRAP AROUND

END

SENSITRON SEMICONDUCTOR

compliant

GLASS, D-5B PACKAGE, 2 PIN

2

D-5B PACKAGE

EAR99

8541.10.00.80

Check for Price

No

No

Transferred

4 A

30 ns

SILICON

RECTIFIER DIODE

SINGLE

YES

1

AVALANCHE

METALLURGICALLY BONDED

ULTRA FAST RECOVERY POWER

75 A

1

Not Qualified

O-LELF-R2

e0

MIL-19500/590F

ISOLATED

2

GLASS

ROUND

LONG FORM

TIN LEAD

WRAP AROUND

END

MICROSEMI CORP

unknown

GLASS, D-5B PACKAGE, 2 PIN

2

D-5B PACKAGE

EAR99

8541.10.00.80

Compare

Microchip Technology Inc

No

Active

1.75 A

1.5 V

30 ns

2 µA

SILICON

220 V

RECTIFIER DIODE

SINGLE

YES

200 V

1

HIGH RELIABILITY

ULTRA FAST RECOVERY

75 A

1

200 V

Qualified

O-LELF-R2

e0

MIL-STD-750; MIL-PRF-19500

150 °C

-65 °C

ISOLATED

2

GLASS

ROUND

LONG FORM

TIN LEAD

WRAP AROUND

END

MICROCHIP TECHNOLOGY INC

compliant

Defense Logistics Agency

Check for Price

Active

4 A

30 ns

SILICON

RECTIFIER DIODE

SINGLE

YES

1

ULTRA FAST RECOVERY POWER

75 A

1

Qualified

O-LELF-R2

MIL-19500/590F

ISOLATED

2

GLASS

ROUND

LONG FORM

WRAP AROUND

END

DEFENSE LOGISTICS AGENCY

unknown

Sensitron Semiconductors

Check for Price

No

No

Active

4 A

1.4 V

30 ns

SILICON

RECTIFIER DIODE

SINGLE

YES

200 V

1

AVALANCHE

METALLURGICALLY BONDED

ULTRA FAST RECOVERY POWER

75 A

1

Qualified

O-LELF-R2

MIL-19500/590F

175 °C

NOT SPECIFIED

NOT SPECIFIED

ISOLATED

2

GLASS

ROUND

LONG FORM

WRAP AROUND

END

SENSITRON SEMICONDUCTOR

compliant

GLASS, D-5B PACKAGE, 2 PIN

2

D-5B PACKAGE

EAR99

8541.10.00.80

Microsemi Corporation

Check for Price

No

No

Transferred

4 A

30 ns

SILICON

RECTIFIER DIODE

SINGLE

YES

1

AVALANCHE

METALLURGICALLY BONDED

ULTRA FAST RECOVERY POWER

75 A

1

Not Qualified

O-LELF-R2

e0

MIL-19500/590F

ISOLATED

2

GLASS

ROUND

LONG FORM

TIN LEAD

WRAP AROUND

END

MICROSEMI CORP

unknown

GLASS, D-5B PACKAGE, 2 PIN

2

D-5B PACKAGE

EAR99

8541.10.00.80