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JAN1N6621
Microchip Technology Inc
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$11.2691 | No | Active | 1.2 A | 1.6 V | 45 ns | 500 nA | SILICON | RECTIFIER DIODE | SINGLE | NO | 400 V | 1 | AVALANCHE | HIGH RELIABILITY | ULTRA FAST RECOVERY | 20 A | 1 | Qualified | O-LALF-W2 | e0 | MIL-19500 | 150 °C | -65 °C | ISOLATED | 2 | GLASS | ROUND | LONG FORM | TIN LEAD | WIRE | AXIAL | MICROCHIP TECHNOLOGY INC | HERMETIC SEALED, GLASS, A, 2 PIN | compliant | ||||||||||
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JAN1N6621US
Microchip Technology Inc
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$14.1637 | No | Active | 1.2 A | 1.6 V | 45 ns | 500 nA | SILICON | RECTIFIER DIODE | SINGLE | YES | 400 V | 1 | AVALANCHE | HIGH RELIABILITY | ULTRA FAST RECOVERY | 20 A | 1 | Qualified | O-LELF-R2 | e0 | MIL-19500 | 150 °C | -65 °C | ISOLATED | 2 | GLASS | ROUND | LONG FORM | TIN LEAD | WRAP AROUND | END | MICROCHIP TECHNOLOGY INC | HERMETIC SEALED, GLASS, D-5A, 2 PIN | compliant | ||||||||||
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JAN1N6621US
Microsemi Corporation
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$17.0170 | No | No | Transferred | 1.2 A | 1.6 V | 45 ns | 500 nA | SILICON | RECTIFIER DIODE | SINGLE | YES | 400 V | 1 | AVALANCHE | HIGH RELIABILITY | ULTRA FAST RECOVERY | 20 A | 1 | Not Qualified | O-LELF-R2 | e0 | MIL-19500 | 150 °C | -65 °C | ISOLATED | 2 | GLASS | ROUND | LONG FORM | TIN LEAD | WRAP AROUND | END | MICROSEMI CORP | HERMETIC SEALED, GLASS, D-5A, 2 PIN | unknown | 2 | EAR99 | 8541.10.00.80 | ||||||
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JAN1N6621US
Defense Logistics Agency
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Check for Price | Active | 2 A | 30 ns | SILICON | RECTIFIER DIODE | SINGLE | YES | 1 | ULTRA FAST RECOVERY POWER | 20 A | 1 | Qualified | O-LELF-R2 | MIL-19500/585E | ISOLATED | 2 | GLASS | ROUND | LONG FORM | WRAP AROUND | END | DEFENSE LOGISTICS AGENCY | unknown | |||||||||||||||||||||
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JAN1N6621U
Microsemi Corporation
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Check for Price | No | Transferred | 1.2 A | 1.4 V | 30 ns | SILICON | RECTIFIER DIODE | SINGLE | YES | 400 V | 1 | ULTRA FAST RECOVERY | 20 A | 1 | Not Qualified | O-LELF-R2 | MIL | 175 °C | NOT SPECIFIED | NOT SPECIFIED | ISOLATED | 2 | GLASS | ROUND | LONG FORM | WRAP AROUND | END | MICROSEMI CORP | HERMETIC, MELF-A, 2 PIN | compliant | EAR99 | 8541.10.00.80 | ||||||||||||
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JAN1N6621
Sensitron Semiconductors
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Check for Price | No | No | Active | 1.2 A | 1.4 V | 30 ns | SILICON | RECTIFIER DIODE | SINGLE | NO | 400 V | 1 | ULTRA FAST RECOVERY | 20 A | 1 | Qualified | O-LALF-W2 | e0 | MIL | 150 °C | ISOLATED | 2 | GLASS | ROUND | LONG FORM | TIN LEAD | WIRE | AXIAL | SENSITRON SEMICONDUCTOR | HERMETIC, 106, 2 PIN | compliant | 2 | EAR99 | 8541.10.00.80 | 106 | |||||||||
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JAN1N6621
Microsemi Corporation
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Check for Price | No | No | Transferred | 1.2 A | 1.6 V | 45 ns | 500 nA | SILICON | RECTIFIER DIODE | SINGLE | NO | 400 V | 1 | AVALANCHE | HIGH RELIABILITY | ULTRA FAST RECOVERY | 20 A | 1 | Not Qualified | O-LALF-W2 | e0 | MIL-19500 | 150 °C | -65 °C | ISOLATED | 2 | GLASS | ROUND | LONG FORM | TIN LEAD | WIRE | AXIAL | MICROSEMI CORP | HERMETIC SEALED, GLASS, A, 2 PIN | unknown | 2 | EAR99 | 8541.10.00.80 | ||||||
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JAN1N6621US
Sensitron Semiconductors
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Check for Price | No | No | Active | 2 A | 1.6 V | 30 ns | SILICON | RECTIFIER DIODE | SINGLE | YES | 400 V | 1 | AVALANCHE | METALLURGICALLY BONDED | ULTRA FAST RECOVERY | 20 A | 1 | Qualified | O-LELF-R2 | MIL-19500/585 | 175 °C | NOT SPECIFIED | NOT SPECIFIED | ISOLATED | 2 | GLASS | ROUND | LONG FORM | WRAP AROUND | END | SENSITRON SEMICONDUCTOR | HERMETIC SEALED, GLASS, D-5A, 2 PIN | compliant | 2 | EAR99 | 8541.10.00.80 | ||||||||
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JAN1N6621U
Sensitron Semiconductors
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Check for Price | No | No | Active | 1.2 A | 1.4 V | 30 ns | SILICON | RECTIFIER DIODE | SINGLE | YES | 400 V | 1 | ULTRA FAST RECOVERY | 20 A | 1 | Qualified | O-LELF-R2 | MIL | 150 °C | NOT SPECIFIED | NOT SPECIFIED | ISOLATED | 2 | GLASS | ROUND | LONG FORM | WRAP AROUND | END | SENSITRON SEMICONDUCTOR | MELF-A, 2 PIN | compliant | 2 | EAR99 | 8541.10.00.80 | MELF | |||||||||
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JAN1N6621/TR
Microsemi Corporation
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Check for Price | Transferred | RECTIFIER DIODE | MICROSEMI CORP | unknown |