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JAN1N5804
Microchip Technology Inc
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$6.3626 | No | Active | 2.5 A | 875 mV | 25 ns | 3 W | SILICON | RECTIFIER DIODE | SINGLE | NO | 100 V | 1 | AVALANCHE | HIGH RELIABILITY | ULTRA FAST RECOVERY POWER | 35 A | 1 | Qualified | O-XALF-W2 | e0 | MIL-19500 | 1 | 175 °C | -65 °C | ISOLATED | 2 | UNSPECIFIED | ROUND | LONG FORM | TIN LEAD | WIRE | AXIAL | MICROCHIP TECHNOLOGY INC | compliant | |||||||||||||||
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JAN1N5804
Microsemi Corporation
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$8.5470 | No | No | Transferred | 2.5 A | 875 mV | 25 ns | 3 W | SILICON | RECTIFIER DIODE | SINGLE | NO | 100 V | 1 | AVALANCHE | HIGH RELIABILITY | ULTRA FAST RECOVERY POWER | 35 A | 1 | Not Qualified | O-XALF-W2 | e0 | MIL-19500 | 1 | 175 °C | -65 °C | ISOLATED | 2 | UNSPECIFIED | ROUND | LONG FORM | TIN LEAD | WIRE | AXIAL | MICROSEMI CORP | unknown | EAR99 | 8541.10.00.80 | Microsemi Corporation | |||||||||||
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JAN1N5804US
Microchip Technology Inc
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$9.7140 | No | Active | 2.5 A | 875 mV | 25 ns | SILICON | RECTIFIER DIODE | SINGLE | YES | 100 V | 1 | ULTRA FAST RECOVERY POWER | 35 A | 1 | Qualified | O-LELF-R2 | MIL-19500/477F | 175 °C | ISOLATED | 2 | GLASS | ROUND | LONG FORM | WRAP AROUND | END | MICROCHIP TECHNOLOGY INC | compliant | ||||||||||||||||||||||
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JAN1N5804US/TR
Microchip Technology Inc
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$9.8684 | Active | 2.5 A | 875 mV | 25 ns | SILICON | RECTIFIER DIODE | SINGLE | YES | 100 V | 1 | ULTRA FAST RECOVERY POWER | 35 A | 1 | Qualified | O-LELF-R2 | MIL-19500/477F | 175 °C | NOT SPECIFIED | NOT SPECIFIED | ISOLATED | 2 | GLASS | ROUND | LONG FORM | WRAP AROUND | END | MICROCHIP TECHNOLOGY INC | unknown | EAR99 | 8541.10.00.80 | |||||||||||||||||||
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JAN1N5804US
Semtech Corporation
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$12.7266 | Transferred | 2.5 A | 875 mV | 25 ns | SILICON | RECTIFIER DIODE | SINGLE | YES | 100 V | 1 | ULTRA FAST RECOVERY POWER | 35 A | 1 | Qualified | O-LELF-R2 | MIL-19500/477F | 175 °C | ISOLATED | 2 | GLASS | ROUND | LONG FORM | WRAP AROUND | END | SEMTECH CORP | unknown | EAR99 | 8541.10.00.80 | SEMTECH | ||||||||||||||||||||
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JAN1N5804
Semtech Corporation
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$13.4851 | Transferred | 3.3 A | 875 mV | 25 ns | 1 µA | SILICON | RECTIFIER DIODE | SINGLE | NO | 100 V | 1 | SUPER FAST RECOVERY | 35 A | 1 | Qualified | O-LALF-W2 | MIL-19500/477 | 175 °C | -65 °C | ISOLATED | 2 | GLASS | ROUND | LONG FORM | WIRE | AXIAL | SEMTECH CORP | unknown | EAR99 | 8541.10.00.80 | SEMTECH | G111, 2 PIN | 2 | G111 | |||||||||||||||
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JAN1N5804URS
Microchip Technology Inc
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$19.4281 | No | Active | 1 A | 25 ns | SILICON | RECTIFIER DIODE | SINGLE | YES | 100 V | 1 | HIGH RELIABILITY | 1 | Qualified | O-LELF-R2 | e0 | MIL-19500 | 175 °C | -65 °C | ISOLATED | 2 | GLASS | ROUND | LONG FORM | Tin/Lead (Sn/Pb) - with Nickel (Ni) barrier | WRAP AROUND | END | MICROCHIP TECHNOLOGY INC | compliant | HERMETIC SEALED, GLASS, MELF-2 | ||||||||||||||||||||
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JAN1N5804URS
Microsemi Corporation
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$21.6902 | No | Transferred | 1 A | 25 ns | SILICON | RECTIFIER DIODE | SINGLE | YES | 100 V | 1 | HIGH RELIABILITY | 1 | Not Qualified | O-LELF-R2 | e0 | MIL-19500 | 175 °C | -65 °C | ISOLATED | 2 | GLASS | ROUND | LONG FORM | Tin/Lead (Sn/Pb) - with Nickel (Ni) barrier | WRAP AROUND | END | MICROSEMI CORP | compliant | EAR99 | 8541.10.00.80 | HERMETIC SEALED, GLASS, MELF-2 | 2 | MELF | ||||||||||||||||
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JAN1N5804URS
Defense Logistics Agency
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Check for Price | Active | 1 A | 25 ns | SILICON | 110 V | RECTIFIER DIODE | SINGLE | YES | 100 V | 1 | 1 | 100 V | Qualified | O-LELF-R2 | MIL-19500 | ISOLATED | 2 | GLASS | ROUND | LONG FORM | WRAP AROUND | END | DEFENSE LOGISTICS AGENCY | unknown | |||||||||||||||||||||||||
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JAN1N5804US
Micross Components
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Check for Price | Active | 2.5 A | 875 mV | 25 ns | SILICON | RECTIFIER DIODE | SINGLE | YES | 100 V | 1 | ULTRA FAST RECOVERY POWER | 35 A | 1 | Qualified | O-LELF-R2 | MIL-19500/477F | 175 °C | ISOLATED | 2 | GLASS | ROUND | LONG FORM | WRAP AROUND | END | MICROSS COMPONENTS | unknown |