Parametric results for: JAN1N5712-1 under Rectifier Diodes
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JAN1N5712-1
Microchip Technology Inc
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$5.6441 | No | Active | 75 mA | 1 V | 150 nA | SILICON | 20 V | RECTIFIER DIODE | SINGLE | NO | 16 V | 1 | SCHOTTKY | HIGH RELIABILITY | GENERAL PURPOSE | 1 | 16 V | Qualified | O-LALF-W2 | e0 | MIL-PRF-19500; MIL-STD-750 | DO-204AH | 150 °C | -65 °C | ISOLATED | 2 | GLASS | ROUND | LONG FORM | TIN LEAD | WIRE | AXIAL | MICROCHIP TECHNOLOGY INC | HERMETIC SEALED, GLASS PACKAGE-2 | compliant | ||||||||
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JAN1N5712-1/TR
Microchip Technology Inc
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$5.8026 | No | Active | 75 mA | 1 V | 150 nA | SILICON | 20 V | RECTIFIER DIODE | SINGLE | NO | 16 V | 1 | SCHOTTKY | HIGH RELIABILITY | GENERAL PURPOSE | 1 | 16 V | O-LALF-W2 | e0 | MIL-PRF-19500; MIL-STD-750 | DO-204AH | 150 °C | -65 °C | ISOLATED | 2 | GLASS | ROUND | LONG FORM | Tin/Lead (Sn/Pb) | WIRE | AXIAL | MICROCHIP TECHNOLOGY INC | DO-35, 2 PIN | compliant | |||||||||
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JAN1N5712-1
Compensated Devices Inc
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Check for Price | Transferred | 75 mA | SILICON | RECTIFIER DIODE | SINGLE | NO | 1 | SCHOTTKY | METALLURGICALLY BONDED | Not Qualified | O-LALF-W2 | MIL-19500/444H | 150 °C | -65 °C | ISOLATED | 2 | GLASS | ROUND | LONG FORM | WIRE | AXIAL | COMPENSATED DEVICES INC | GLAAS, SIMILAR TO DO-35, 2 PIN | unknown | |||||||||||||||||||
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JAN1N5712-1
Microsemi Corporation
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Check for Price | No | No | Transferred | 75 mA | SILICON | RECTIFIER DIODE | SINGLE | NO | 1 | SCHOTTKY | METALLURGICALLY BONDED | 1 | Not Qualified | O-LALF-W2 | e0 | MIL-19500/444 | DO-35 | ISOLATED | 2 | GLASS | ROUND | LONG FORM | TIN LEAD | WIRE | AXIAL | MICROSEMI CORP | HERMETIC SEALED, GLASS PACKAGE-2 | unknown | DO-35 | 2 | EAR99 | 8541.10.00.70 | Microsemi Corporation | ||||||||||
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JAN1N5712-1
Defense Logistics Agency
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Check for Price | Active | 75 mA | SILICON | RECTIFIER DIODE | SINGLE | NO | 1 | METALLURGICALLY BONDED | 1 | Qualified | O-LALF-W2 | MIL-19500/444H | ISOLATED | 2 | GLASS | ROUND | LONG FORM | WIRE | AXIAL | DEFENSE LOGISTICS AGENCY | GLAAS, SIMILAR TO DO-35, 2 PIN | unknown |