Parametric results for: IXTY01N100D under Power Field-Effect Transistors

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Manufacturer Part Number: ixty01n100d
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IXTY01N100D
IXYS Corporation
IXTY01N100D
Littelfuse Inc
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JESD-609 Code
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Samacsys Manufacturer
Yes Yes Transferred N-CHANNEL YES SINGLE WITH BUILT-IN DIODE 2 1 kV 1 100 mA 110 Ω METAL-OXIDE SEMICONDUCTOR DEPLETION MODE 25 W 400 mA SWITCHING SILICON TO-252AA R-PSSO-G2 e3 Not Qualified 1 150 °C 260 10 DRAIN PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE Matte Tin (Sn) GULL WING SINGLE IXYS CORP TO-252AA TO-252AA, 3 PIN 4 compliant EAR99
Yes Active N-CHANNEL YES SINGLE WITH BUILT-IN DIODE 2 1 400 mA 80 Ω METAL-OXIDE SEMICONDUCTOR DEPLETION MODE 1.1 W 25 W 400 mA SWITCHING SILICON TO-252AA R-PSSO-G2 e3 1 150 °C -55 °C 260 10 DRAIN PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE Matte Tin (Sn) GULL WING SINGLE LITTELFUSE INC not_compliant EAR99 8541.29.00.95 LITTELFUSE
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IXTY01N100D
IXYS Corporation
$2.5046 Yes Yes Transferred N-CHANNEL YES SINGLE WITH BUILT-IN DIODE 2 1 kV 1 100 mA 110 Ω METAL-OXIDE SEMICONDUCTOR DEPLETION MODE 25 W 400 mA SWITCHING SILICON TO-252AA R-PSSO-G2 e3 Not Qualified 1 150 °C 260 10 DRAIN PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE Matte Tin (Sn) GULL WING SINGLE IXYS CORP TO-252AA TO-252AA, 3 PIN 4 compliant EAR99
IXTY01N100D
Littelfuse Inc
Check for Price Yes Active N-CHANNEL YES SINGLE WITH BUILT-IN DIODE 2 1 400 mA 80 Ω METAL-OXIDE SEMICONDUCTOR DEPLETION MODE 1.1 W 25 W 400 mA SWITCHING SILICON TO-252AA R-PSSO-G2 e3 1 150 °C -55 °C 260 10 DRAIN PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE Matte Tin (Sn) GULL WING SINGLE LITTELFUSE INC not_compliant EAR99 8541.29.00.95 LITTELFUSE