Parametric results for: IXTM21N50 under Power Field-Effect Transistors

All Filters Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology JEDEC-95 Code JESD-30 Code Manufacturer Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation Ambient-Max Power Dissipation-Max (Abs) Surface Mount

DRAIN 1

2 hits Apply

Configuration (1)

SINGLE WITH BUILT-IN DIODE 1

2 hits Apply

DS Breakdown Voltage-Min (1)

500 V 1

2 hits Apply

Drain Current-Max (ID) (1)

21 A 1

2 hits Apply

Drain-source On Resistance-Max (1)

250 mΩ 1

2 hits Apply

METAL-OXIDE SEMICONDUCTOR 1

2 hits Apply

TO-204AE 1

2 hits Apply

O-MBFM-P2 1

2 hits Apply

Manufacturer (2)

IXYS Corporation 1 New Jersey Semiconductor Products Inc 1

2 hits Apply

Number of Elements (1)

1 1

2 hits Apply

Number of Terminals (1)

2 1

2 hits Apply

ENHANCEMENT MODE 1

2 hits Apply

150.0 °C 1

2 hits Apply

METAL 1

2 hits Apply

ROUND 1

2 hits Apply

FLANGE MOUNT 1

2 hits Apply

Active 1 Obsolete 1

2 hits Apply

Yes 1

2 hits Apply

NOT SPECIFIED 1

2 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 1

2 hits Apply

300 W 1

2 hits Apply

250 W 1

2 hits Apply

Surface Mount (1)

NO 1

2 hits Apply