Parametric results for: IXTH13N110SN under Power Field-Effect Transistors

All Filters Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology JEDEC-95 Code JESD-30 Code JESD-609 Code Manufacturer Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Polarity/Channel Type Power Dissipation Ambient-Max Power Dissipation-Max (Abs) Surface Mount

DRAIN 1

1 hit Apply

Configuration (1)

SINGLE WITH BUILT-IN DIODE 1

1 hit Apply

DS Breakdown Voltage-Min (1)

1.1 kV 1

1 hit Apply

Drain Current-Max (ID) (1)

13 A 1

1 hit Apply

Drain-source On Resistance-Max (1)

920 mΩ 1

1 hit Apply

METAL-OXIDE SEMICONDUCTOR 1

1 hit Apply

TO-247AD 1

1 hit Apply

R-PSFM-T3 1

1 hit Apply

e3 1

1 hit Apply

Manufacturer (1)

IXYS Corporation 1

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Number of Elements (1)

1 1

1 hit Apply

Number of Terminals (1)

3 1

1 hit Apply

ENHANCEMENT MODE 1

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150.0 °C 1

1 hit Apply

PLASTIC/EPOXY 1

1 hit Apply

RECTANGULAR 1

1 hit Apply

FLANGE MOUNT 1

1 hit Apply

Obsolete 1

1 hit Apply

Yes 1

1 hit Apply

Polarity/Channel Type (1)

N-CHANNEL 1

1 hit Apply

360 W 1

1 hit Apply

360 W 1

1 hit Apply

Surface Mount (1)

NO 1

1 hit Apply