Parametric results for: IXFN300N10P under Power Field-Effect Transistors

All Filters Additional Feature Avalanche Energy Rating (Eas) Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology JESD-30 Code Manufacturer Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount

AVALANCHE RATED 2

4 hits Apply

3000.0 mJ 2

4 hits Apply

ISOLATED 2

4 hits Apply

Configuration (1)

SINGLE WITH BUILT-IN DIODE 2

4 hits Apply

DS Breakdown Voltage-Min (1)

100 V 2

4 hits Apply

Drain Current-Max (ID) (1)

295 A 2

4 hits Apply

Drain-source On Resistance-Max (1)

5.5 mΩ 2

4 hits Apply

METAL-OXIDE SEMICONDUCTOR 2

4 hits Apply

R-PUFM-X4 2

4 hits Apply

Manufacturer (2)

IXYS Corporation 2 Littelfuse Inc 2

4 hits Apply

Number of Elements (1)

1 2

4 hits Apply

Number of Terminals (1)

4 2

4 hits Apply

ENHANCEMENT MODE 2

4 hits Apply

150.0 °C 2

4 hits Apply

PLASTIC/EPOXY 2

4 hits Apply

RECTANGULAR 2

4 hits Apply

FLANGE MOUNT 2

4 hits Apply

Active 2 Transferred 2

4 hits Apply

Yes 1

4 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 2

4 hits Apply

1.07 kW 2

4 hits Apply

Surface Mount (1)

NO 2

4 hits Apply