Parametric results for: IXFN100 under Power Field-Effect Transistors

All Filters Additional Feature Avalanche Energy Rating (Eas) Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology Feedback Cap-Max (Crss) JESD-30 Code Manufacturer Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Operating Temperature-Min Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount

AVALANCHE RATED 10

17 hits Apply

3000.0 mJ 1 3500.0 mJ 1 5000.0 mJ 3

Min (mJ) - Max (mJ)

17 hits Apply

DRAIN 1 ISOLATED 10

17 hits Apply

Configuration (2)

SINGLE 2 SINGLE WITH BUILT-IN DIODE 11

17 hits Apply

DS Breakdown Voltage-Min (5)

100 V 4 200 V 2 250 V 1 500 V 3 650 V 1

Min (V) - Max (V)

17 hits Apply

Drain Current-Max (ID) (4)

78 A 1 82 A 1 90 A 2 100 A 9

Min (A) - Max (A)

17 hits Apply

Drain-source On Resistance-Max (5)

12.5 mΩ 4 23 mΩ 2 27 mΩ 1 30 mΩ 1 49 mΩ 3

Min (Ω) - Max (Ω)

17 hits Apply

METAL-OXIDE SEMICONDUCTOR 13

17 hits Apply

2.6 pF 1

17 hits Apply

R-PUFM-X4 11

17 hits Apply

Manufacturer (2)

IXYS Corporation 10 Littelfuse Inc 7

17 hits Apply

Number of Elements (1)

1 13

17 hits Apply

Number of Terminals (1)

4 11

17 hits Apply

ENHANCEMENT MODE 13

17 hits Apply

150.0 °C 9

17 hits Apply

-55.0 °C 1

17 hits Apply

PLASTIC/EPOXY 11

17 hits Apply

RECTANGULAR 11

17 hits Apply

FLANGE MOUNT 11

17 hits Apply

Active 5 Obsolete 5 Transferred 7

17 hits Apply

Yes 6

17 hits Apply

NOT SPECIFIED 1

17 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 13

17 hits Apply

300 W 2 595 W 1 600 W 1 960 W 1

Min (W) - Max (W)

17 hits Apply

Surface Mount (1)

NO 13

17 hits Apply